Investigation of growing the Hg₁₋x₋y₋zAxByCzTe solid solutions by modified zone melting method
This paper presents research of the process for growing the crystals of semiconductor solid solutions Hg₁₋x₋y₋zAxByCzTe under conditions of a modified zone melting.
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| Date: | 2005 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121548 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Investigation of growing the Hg₁₋x₋y₋zAxByCzTe solid solutions by modified zone melting method / I.N. Gorbatyuk, V.V. Zhikharevich, S.E. Ostapov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 22-25. — Бібліогр.: 5 назв. — англ. |