Low doses effect in GaP light-emitting diodes
The paper is devoted to the electrophysical characteristics study of serial red and green GaP light-emitting diodes (LEDs) irradiated with low α-particles doses (Φ ≤ 10¹² cm⁻²). It was stated that radiation features of p-n-junction and its capacitance change in dependence on temperature. The capacit...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2016 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121559 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Low doses effect in GaP light-emitting diodes / O.M. Hontaruk, O.V. Konoreva, Ye.V. Malyi, I.V. Petrenko, M.B. Pinkovska, O.I. Radkevych, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 183-187. — Бібліогр.: 13 назв. — англ. |