Low doses effect in GaP light-emitting diodes
The paper is devoted to the electrophysical characteristics study of serial red and green GaP light-emitting diodes (LEDs) irradiated with low α-particles doses (Φ ≤ 10¹² cm⁻²). It was stated that radiation features of p-n-junction and its capacitance change in dependence on temperature. The capacit...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2016 |
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121559 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Low doses effect in GaP light-emitting diodes / O.M. Hontaruk, O.V. Konoreva, Ye.V. Malyi, I.V. Petrenko, M.B. Pinkovska, O.I. Radkevych, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 183-187. — Бібліогр.: 13 назв. — англ. |
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Hontaruk, O.M. Konoreva, O.V. Malyi, Ye.V. Petrenko, I.V. Pinkovska, M.B. Radkevych, O.I. Tartachnyk, V.P. 2017-06-14T16:44:54Z 2017-06-14T16:44:54Z 2016 Low doses effect in GaP light-emitting diodes / O.M. Hontaruk, O.V. Konoreva, Ye.V. Malyi, I.V. Petrenko, M.B. Pinkovska, O.I. Radkevych, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 183-187. — Бібліогр.: 13 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.02.183 PACS 29.40.-n, 85.30.-z, 85.60.Dw https://nasplib.isofts.kiev.ua/handle/123456789/121559 The paper is devoted to the electrophysical characteristics study of serial red and green GaP light-emitting diodes (LEDs) irradiated with low α-particles doses (Φ ≤ 10¹² cm⁻²). It was stated that radiation features of p-n-junction and its capacitance change in dependence on temperature. The capacitance grows at 300 K, and drops at 77 K. At the same time, a direct branch of current-voltage characteristics shifts into the lower voltage direction, and appropriative barrier potential reduction value from 6.5 down to 3.5 eV is observed. The effects are caused by radiation defects, charge state of which depends on the Fermi level in GaP. The assumption has been made about high ionization level role in the sulfur impurity transition process into electrically active donor position. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Low doses effect in GaP light-emitting diodes Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| title |
Low doses effect in GaP light-emitting diodes |
| spellingShingle |
Low doses effect in GaP light-emitting diodes Hontaruk, O.M. Konoreva, O.V. Malyi, Ye.V. Petrenko, I.V. Pinkovska, M.B. Radkevych, O.I. Tartachnyk, V.P. |
| title_short |
Low doses effect in GaP light-emitting diodes |
| title_full |
Low doses effect in GaP light-emitting diodes |
| title_fullStr |
Low doses effect in GaP light-emitting diodes |
| title_full_unstemmed |
Low doses effect in GaP light-emitting diodes |
| title_sort |
low doses effect in gap light-emitting diodes |
| author |
Hontaruk, O.M. Konoreva, O.V. Malyi, Ye.V. Petrenko, I.V. Pinkovska, M.B. Radkevych, O.I. Tartachnyk, V.P. |
| author_facet |
Hontaruk, O.M. Konoreva, O.V. Malyi, Ye.V. Petrenko, I.V. Pinkovska, M.B. Radkevych, O.I. Tartachnyk, V.P. |
| publishDate |
2016 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The paper is devoted to the electrophysical characteristics study of serial red and green GaP light-emitting diodes (LEDs) irradiated with low α-particles doses (Φ ≤ 10¹² cm⁻²). It was stated that radiation features of p-n-junction and its capacitance change in dependence on temperature. The capacitance grows at 300 K, and drops at 77 K. At the same time, a direct branch of current-voltage characteristics shifts into the lower voltage direction, and appropriative barrier potential reduction value from 6.5 down to 3.5 eV is observed. The effects are caused by radiation defects, charge state of which depends on the Fermi level in GaP. The assumption has been made about high ionization level role in the sulfur impurity transition process into electrically active donor position.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121559 |
| citation_txt |
Low doses effect in GaP light-emitting diodes / O.M. Hontaruk, O.V. Konoreva, Ye.V. Malyi, I.V. Petrenko, M.B. Pinkovska, O.I. Radkevych, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 183-187. — Бібліогр.: 13 назв. — англ. |
| work_keys_str_mv |
AT hontarukom lowdoseseffectingaplightemittingdiodes AT konorevaov lowdoseseffectingaplightemittingdiodes AT malyiyev lowdoseseffectingaplightemittingdiodes AT petrenkoiv lowdoseseffectingaplightemittingdiodes AT pinkovskamb lowdoseseffectingaplightemittingdiodes AT radkevychoi lowdoseseffectingaplightemittingdiodes AT tartachnykvp lowdoseseffectingaplightemittingdiodes |
| first_indexed |
2025-12-07T20:24:05Z |
| last_indexed |
2025-12-07T20:24:05Z |
| _version_ |
1850882439462780928 |