Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K
Ge₁₋xSix solid solutions are one of promissing materials for semiconductor technique. However, their electrical and optical properties, especially with silicon content more than 5 at. % have been little studied. In particular, in the number of works [1-3] there have been presented the experimental r...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2006 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121613 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K / Sh.M. Abbasov, Y.T. Agaverdiyeva, T.I. Kerimova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 22-24. — Бібліогр.: 10 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862719911237779456 |
|---|---|
| author | Abbasov, Sh.M. Agaverdiyeva, Y.T. Kerimova, T.I. |
| author_facet | Abbasov, Sh.M. Agaverdiyeva, Y.T. Kerimova, T.I. |
| citation_txt | Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K / Sh.M. Abbasov, Y.T. Agaverdiyeva, T.I. Kerimova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 22-24. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Ge₁₋xSix solid solutions are one of promissing materials for semiconductor technique. However, their electrical and optical properties, especially with silicon content more than 5 at. % have been little studied. In particular, in the number of works [1-3] there have been presented the experimental results of study in the region 0.52 eV in germanium irradiated by fast electrons, gamma-rays and protons at the temperature of liquid nitrogen. In the literature, however, there are no data on studying the absorption band in the range 0.52 eV in Ge₁₋xSix solid solution irradiated by fast electrons.
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| first_indexed | 2025-12-07T18:22:17Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121613 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:22:17Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Abbasov, Sh.M. Agaverdiyeva, Y.T. Kerimova, T.I. 2017-06-15T03:03:41Z 2017-06-15T03:03:41Z 2006 Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K / Sh.M. Abbasov, Y.T. Agaverdiyeva, T.I. Kerimova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 22-24. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 42.25.Bs, 61.82.Fk https://nasplib.isofts.kiev.ua/handle/123456789/121613 Ge₁₋xSix solid solutions are one of promissing materials for semiconductor technique. However, their electrical and optical properties, especially with silicon content more than 5 at. % have been little studied. In particular, in the number of works [1-3] there have been presented the experimental results of study in the region 0.52 eV in germanium irradiated by fast electrons, gamma-rays and protons at the temperature of liquid nitrogen. In the literature, however, there are no data on studying the absorption band in the range 0.52 eV in Ge₁₋xSix solid solution irradiated by fast electrons. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K Article published earlier |
| spellingShingle | Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K Abbasov, Sh.M. Agaverdiyeva, Y.T. Kerimova, T.I. |
| title | Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K |
| title_full | Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K |
| title_fullStr | Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K |
| title_full_unstemmed | Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K |
| title_short | Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K |
| title_sort | study of the absorption band in the range 0.3-0.9 ev inherent to solid solutions p-ge₁₋xsix irradiated by fast electrons at the temperature 77 k |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121613 |
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