Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K

Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K

Ge₁₋xSix solid solutions are one of promissing materials for semiconductor technique. However, their electrical and optical properties, especially with silicon content more than 5 at. % have been little studied. In particular, in the number of works [1-3] there have been presented the experimental r...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2006
Автори: Abbasov, Sh.M., Agaverdiyeva, Y.T., Kerimova, T.I.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121613
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K / Sh.M. Abbasov, Y.T. Agaverdiyeva, T.I. Kerimova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 22-24. — Бібліогр.: 10 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121613
record_format dspace
spelling Abbasov, Sh.M.
Agaverdiyeva, Y.T.
Kerimova, T.I.
2017-06-15T03:03:41Z
2017-06-15T03:03:41Z
2006
Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K / Sh.M. Abbasov, Y.T. Agaverdiyeva, T.I. Kerimova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 22-24. — Бібліогр.: 10 назв. — англ.
1560-8034
PACS 42.25.Bs, 61.82.Fk
https://nasplib.isofts.kiev.ua/handle/123456789/121613
Ge₁₋xSix solid solutions are one of promissing materials for semiconductor technique. However, their electrical and optical properties, especially with silicon content more than 5 at. % have been little studied. In particular, in the number of works [1-3] there have been presented the experimental results of study in the region 0.52 eV in germanium irradiated by fast electrons, gamma-rays and protons at the temperature of liquid nitrogen. In the literature, however, there are no data on studying the absorption band in the range 0.52 eV in Ge₁₋xSix solid solution irradiated by fast electrons.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K
spellingShingle Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K
Abbasov, Sh.M.
Agaverdiyeva, Y.T.
Kerimova, T.I.
title_short Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K
title_full Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K
title_fullStr Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K
title_full_unstemmed Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K
title_sort study of the absorption band in the range 0.3-0.9 ev inherent to solid solutions p-ge₁₋xsix irradiated by fast electrons at the temperature 77 k
author Abbasov, Sh.M.
Agaverdiyeva, Y.T.
Kerimova, T.I.
author_facet Abbasov, Sh.M.
Agaverdiyeva, Y.T.
Kerimova, T.I.
publishDate 2006
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Ge₁₋xSix solid solutions are one of promissing materials for semiconductor technique. However, their electrical and optical properties, especially with silicon content more than 5 at. % have been little studied. In particular, in the number of works [1-3] there have been presented the experimental results of study in the region 0.52 eV in germanium irradiated by fast electrons, gamma-rays and protons at the temperature of liquid nitrogen. In the literature, however, there are no data on studying the absorption band in the range 0.52 eV in Ge₁₋xSix solid solution irradiated by fast electrons.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121613
citation_txt Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K / Sh.M. Abbasov, Y.T. Agaverdiyeva, T.I. Kerimova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 22-24. — Бібліогр.: 10 назв. — англ.
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AT agaverdiyevayt studyoftheabsorptionbandintherange0309evinherenttosolidsolutionspge1xsixirradiatedbyfastelectronsatthetemperature77k
AT kerimovati studyoftheabsorptionbandintherange0309evinherenttosolidsolutionspge1xsixirradiatedbyfastelectronsatthetemperature77k
first_indexed 2025-12-07T18:22:17Z
last_indexed 2025-12-07T18:22:17Z
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