The influence of surface defects on the pinhole formation in silicide thin film
The growth of the CoSi layer was considered within the framework of the grain boundary diffusion model. The time dependences of the temperature due to the exothermic reaction of silicide formation as well as the dependences of the CoSi layer thickness were calculated for various values of the reacti...
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| Datum: | 2006 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121615 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The influence of surface defects on the pinhole formation in silicide thin film / I.V. Belousov, A.N. Grib, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 29-34. — Бібліогр.: 19 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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nasplib_isofts_kiev_ua-123456789-1216152025-02-09T12:25:13Z The influence of surface defects on the pinhole formation in silicide thin film Belousov, I.V. Grib, A.N. Kuznetsov, G.V. The growth of the CoSi layer was considered within the framework of the grain boundary diffusion model. The time dependences of the temperature due to the exothermic reaction of silicide formation as well as the dependences of the CoSi layer thickness were calculated for various values of the reaction activation energy. It was shown that the heat release at high reaction velocities can lead to the considerable increase of the temperature up to melting of the silicide and covering Co layers. The model of pinhole formation in cobalt silicide films was proposed on the basis of local melting in the reaction area at crystal defects of the silicon surface. 2006 Article The influence of surface defects on the pinhole formation in silicide thin film / I.V. Belousov, A.N. Grib, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 29-34. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS 68.35Fx, 68.55Ln, 82.65.Dp https://nasplib.isofts.kiev.ua/handle/123456789/121615 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| language |
English |
| description |
The growth of the CoSi layer was considered within the framework of the grain boundary diffusion model. The time dependences of the temperature due to the exothermic reaction of silicide formation as well as the dependences of the CoSi layer thickness were calculated for various values of the reaction activation energy. It was shown that the heat release at high reaction velocities can lead to the considerable increase of the temperature up to melting of the silicide and covering Co layers. The model of pinhole formation in cobalt silicide films was proposed on the basis of local melting in the reaction area at crystal defects of the silicon surface. |
| format |
Article |
| author |
Belousov, I.V. Grib, A.N. Kuznetsov, G.V. |
| spellingShingle |
Belousov, I.V. Grib, A.N. Kuznetsov, G.V. The influence of surface defects on the pinhole formation in silicide thin film Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Belousov, I.V. Grib, A.N. Kuznetsov, G.V. |
| author_sort |
Belousov, I.V. |
| title |
The influence of surface defects on the pinhole formation in silicide thin film |
| title_short |
The influence of surface defects on the pinhole formation in silicide thin film |
| title_full |
The influence of surface defects on the pinhole formation in silicide thin film |
| title_fullStr |
The influence of surface defects on the pinhole formation in silicide thin film |
| title_full_unstemmed |
The influence of surface defects on the pinhole formation in silicide thin film |
| title_sort |
influence of surface defects on the pinhole formation in silicide thin film |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121615 |
| citation_txt |
The influence of surface defects on the pinhole formation in silicide thin film / I.V. Belousov, A.N. Grib, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 29-34. — Бібліогр.: 19 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2025-11-25T23:46:38Z |
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