Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2006
• 1. Verfasser: Rogozin, I.V.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121623
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy / I.V. Rogozin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 79-82. — Бібліогр.: 27 назв. — англ.

Epitaxial undoped and N-doped ZnO films were obtained using the method of radical beam gettering epitaxy. Structural and luminescent properties of the obtained films were researched. In both cases, there can be seen orientation of the films along c-axis. In the spectrum of low-temperature photolumin...