Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy
Epitaxial undoped and N-doped ZnO films were obtained using the method of radical beam gettering epitaxy. Structural and luminescent properties of the obtained films were researched. In both cases, there can be seen orientation of the films along c-axis. In the spectrum of low-temperature photolumin...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2006 |
| Main Author: | |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121623 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy / I.V. Rogozin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 79-82. — Бібліогр.: 27 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862594860988497920 |
|---|---|
| author | Rogozin, I.V. |
| author_facet | Rogozin, I.V. |
| citation_txt | Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy / I.V. Rogozin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 79-82. — Бібліогр.: 27 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Epitaxial undoped and N-doped ZnO films were obtained using the method of radical beam gettering epitaxy. Structural and luminescent properties of the obtained films were researched. In both cases, there can be seen orientation of the films along c-axis. In the spectrum of low-temperature photoluminescence of N-doped ZnO films, observed was a peak 3.31 eV probably of a neutral acceptor-bound exciton NO. The nature of donor-acceptor band 3.23 eV and green band 2.56 eV was discussed.
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| first_indexed | 2025-11-27T11:29:40Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121623 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-27T11:29:40Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Rogozin, I.V. 2017-06-15T03:12:09Z 2017-06-15T03:12:09Z 2006 Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy / I.V. Rogozin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 79-82. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 61.10.Nz, 61.72.Ji, 68.37.Ps, 78.30.Fs, 78.55.Et https://nasplib.isofts.kiev.ua/handle/123456789/121623 Epitaxial undoped and N-doped ZnO films were obtained using the method of radical beam gettering epitaxy. Structural and luminescent properties of the obtained films were researched. In both cases, there can be seen orientation of the films along c-axis. In the spectrum of low-temperature photoluminescence of N-doped ZnO films, observed was a peak 3.31 eV probably of a neutral acceptor-bound exciton NO. The nature of donor-acceptor band 3.23 eV and green band 2.56 eV was discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy Article published earlier |
| spellingShingle | Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy Rogozin, I.V. |
| title | Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy |
| title_full | Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy |
| title_fullStr | Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy |
| title_full_unstemmed | Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy |
| title_short | Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy |
| title_sort | growing the epitaxial undoped and n-doped zno films by radical beam gettering epitaxy |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121623 |
| work_keys_str_mv | AT rogoziniv growingtheepitaxialundopedandndopedznofilmsbyradicalbeamgetteringepitaxy |