Modelling vacancy microvoid formation in dislocation-free silicon single crystals
An alternative mathematical model of vacancy microvoid formation in dislocation-free silicon single crystals was represented. The analysis of conditions of microvoid nucleation inside the bulk of crystals during cooling after their growth was carried out. The possibility of formation of a quasi-stat...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2006 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121641 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Modelling vacancy microvoid formation in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin, S.A. Koryagin, M.Yu. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 77-81. — Бібліогр.: 12 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862540342933323776 |
|---|---|
| author | Talanin, V.I. Talanin, I.E. Koryagin, S.A. Semikina, M.Yu. |
| author_facet | Talanin, V.I. Talanin, I.E. Koryagin, S.A. Semikina, M.Yu. |
| citation_txt | Modelling vacancy microvoid formation in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin, S.A. Koryagin, M.Yu. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 77-81. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | An alternative mathematical model of vacancy microvoid formation in dislocation-free silicon single crystals was represented. The analysis of conditions of microvoid nucleation inside the bulk of crystals during cooling after their growth was carried out. The possibility of formation of a quasi-stationary microvoid profile in large-scale crystals within the temperature range 1130…1070 °С has been shown.
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| first_indexed | 2025-11-24T16:06:52Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121641 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T16:06:52Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Talanin, V.I. Talanin, I.E. Koryagin, S.A. Semikina, M.Yu. 2017-06-15T03:44:16Z 2017-06-15T03:44:16Z 2006 Modelling vacancy microvoid formation in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin, S.A. Koryagin, M.Yu. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 77-81. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 61.72Bb, 61.72.Jj, 61.72.Yx https://nasplib.isofts.kiev.ua/handle/123456789/121641 An alternative mathematical model of vacancy microvoid formation in dislocation-free silicon single crystals was represented. The analysis of conditions of microvoid nucleation inside the bulk of crystals during cooling after their growth was carried out. The possibility of formation of a quasi-stationary microvoid profile in large-scale crystals within the temperature range 1130…1070 °С has been shown. This scientific work was made by the budgetary funds of
 Ministry of Education and Science of Ukraine as the
 grant of the President of Ukraine. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Modelling vacancy microvoid formation in dislocation-free silicon single crystals Article published earlier |
| spellingShingle | Modelling vacancy microvoid formation in dislocation-free silicon single crystals Talanin, V.I. Talanin, I.E. Koryagin, S.A. Semikina, M.Yu. |
| title | Modelling vacancy microvoid formation in dislocation-free silicon single crystals |
| title_full | Modelling vacancy microvoid formation in dislocation-free silicon single crystals |
| title_fullStr | Modelling vacancy microvoid formation in dislocation-free silicon single crystals |
| title_full_unstemmed | Modelling vacancy microvoid formation in dislocation-free silicon single crystals |
| title_short | Modelling vacancy microvoid formation in dislocation-free silicon single crystals |
| title_sort | modelling vacancy microvoid formation in dislocation-free silicon single crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121641 |
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