Modelling vacancy microvoid formation in dislocation-free silicon single crystals

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2006
• Main Authors: Talanin, V.I., Talanin, I.E., Koryagin, S.A., Semikina, M.Yu.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121641
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Modelling vacancy microvoid formation in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin, S.A. Koryagin, M.Yu. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 77-81. — Бібліогр.: 12 назв. — англ.

An alternative mathematical model of vacancy microvoid formation in dislocation-free silicon single crystals was represented. The analysis of conditions of microvoid nucleation inside the bulk of crystals during cooling after their growth was carried out. The possibility of formation of a quasi-stat...