Screen-printed p-CdTe layers for CdS/CdTe solar cells
Correlation of the recrystallization process technological parameters with the morphology and structure of screen-printed p-CdTe layers intended for CdS/CdTe solar cell fabrication has been established. The optimal regimes to form layers with required characteristics have been found. As distinct fro...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2005 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121646 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Screen-printed p-CdTe layers for CdS/CdTe solar cells / V.P. Klad'ko, P.M. Lytvyn, N.M. Osipyonok, G.S. Pekar, I.V. Prokopenko, A.F. Singaevsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 2. — С. 61-65. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862651260013903872 |
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| author | Klad'ko, V.P. Lytvyn, P.M. Osipyonok, N.M. Pekar, G.S. Prokopenko, I.V. Singaevsky, A.F. |
| author_facet | Klad'ko, V.P. Lytvyn, P.M. Osipyonok, N.M. Pekar, G.S. Prokopenko, I.V. Singaevsky, A.F. |
| citation_txt | Screen-printed p-CdTe layers for CdS/CdTe solar cells / V.P. Klad'ko, P.M. Lytvyn, N.M. Osipyonok, G.S. Pekar, I.V. Prokopenko, A.F. Singaevsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 2. — С. 61-65. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Correlation of the recrystallization process technological parameters with the morphology and structure of screen-printed p-CdTe layers intended for CdS/CdTe solar cell fabrication has been established. The optimal regimes to form layers with required characteristics have been found. As distinct from the used previously screen-printing techniques for CdS/CdTe solar cell fabrication, CdTe layers were doped with Ag or Au not by their diffusion from the layer surface but in the course of layer preparation. For this purpose, tellurides of those metals were added into the raw paste used for CdTe screen printing. It is shown that the developed method has some advantages and allows to prepare CdTe films, structural and electrophysical parameters of which are suitable to fabricate CdS/CdTe solar cells.
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| first_indexed | 2025-12-01T19:43:32Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121646 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T19:43:32Z |
| publishDate | 2005 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Klad'ko, V.P. Lytvyn, P.M. Osipyonok, N.M. Pekar, G.S. Prokopenko, I.V. Singaevsky, A.F. 2017-06-15T03:51:35Z 2017-06-15T03:51:35Z 2005 Screen-printed p-CdTe layers for CdS/CdTe solar cells / V.P. Klad'ko, P.M. Lytvyn, N.M. Osipyonok, G.S. Pekar, I.V. Prokopenko, A.F. Singaevsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 2. — С. 61-65. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 68.35.Bs, 61.10.Nz, 61.72.Cc https://nasplib.isofts.kiev.ua/handle/123456789/121646 Correlation of the recrystallization process technological parameters with the morphology and structure of screen-printed p-CdTe layers intended for CdS/CdTe solar cell fabrication has been established. The optimal regimes to form layers with required characteristics have been found. As distinct from the used previously screen-printing techniques for CdS/CdTe solar cell fabrication, CdTe layers were doped with Ag or Au not by their diffusion from the layer surface but in the course of layer preparation. For this purpose, tellurides of those metals were added into the raw paste used for CdTe screen printing. It is shown that the developed method has some advantages and allows to prepare CdTe films, structural and electrophysical parameters of which are suitable to fabricate CdS/CdTe solar cells. Financial support for this work came through STCU project # 1088. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Screen-printed p-CdTe layers for CdS/CdTe solar cells Article published earlier |
| spellingShingle | Screen-printed p-CdTe layers for CdS/CdTe solar cells Klad'ko, V.P. Lytvyn, P.M. Osipyonok, N.M. Pekar, G.S. Prokopenko, I.V. Singaevsky, A.F. |
| title | Screen-printed p-CdTe layers for CdS/CdTe solar cells |
| title_full | Screen-printed p-CdTe layers for CdS/CdTe solar cells |
| title_fullStr | Screen-printed p-CdTe layers for CdS/CdTe solar cells |
| title_full_unstemmed | Screen-printed p-CdTe layers for CdS/CdTe solar cells |
| title_short | Screen-printed p-CdTe layers for CdS/CdTe solar cells |
| title_sort | screen-printed p-cdte layers for cds/cdte solar cells |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121646 |
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