Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes
The method of electrophysical diagnostic of n⁺-n-n⁺ structures at the etching stage of manufacturing process of power IMPATT diodes has been proposed. A numerical method for specific contacts resistance calculation of vertical ohmic contacts with a non-uniform doping level has been developed. Vertic...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2016 |
| Автори: | , , , , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121657 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes / P.M. Romanets, A.E. Belyaev, А.V. Sachenko, N.S. Boltovets, V.V. Basanets, R.V. Konakova, V.S. Slipokurov, А.А. Khodin, V.А. Pilipenko, V.V. Shynkarenko, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 366-370. — Бібліогр.: 9 назв. — англ. |
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Romanets, P.M. Belyaev, A.E. Sachenko, А.V. Boltovets, N.S. Basanets, V.V. Konakova, R.V. Slipokurov, V.S. Khodin, А.А. Pilipenko, V.А. Shynkarenko, V.V. Kudryk, Ya.Ya. 2017-06-15T08:19:15Z 2017-06-15T08:19:15Z 2016 Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes / P.M. Romanets, A.E. Belyaev, А.V. Sachenko, N.S. Boltovets, V.V. Basanets, R.V. Konakova, V.S. Slipokurov, А.А. Khodin, V.А. Pilipenko, V.V. Shynkarenko, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 366-370. — Бібліогр.: 9 назв. — англ. 1560-8034 : 10.15407/spqeo19.04.366 PACS 73.40.Ns, 85.30.Kk https://nasplib.isofts.kiev.ua/handle/123456789/121657 The method of electrophysical diagnostic of n⁺-n-n⁺ structures at the etching stage of manufacturing process of power IMPATT diodes has been proposed. A numerical method for specific contacts resistance calculation of vertical ohmic contacts with a non-uniform doping level has been developed. Vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si both before and after etching were used for experimental checking this model. It has been computed the value of contact resistance in the interface metal–n⁺ with correction of contribution of n⁺-n and n-n⁺ resistances to the total resistance. The values of total effective resistances of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si may be calculated using the Cox–Strack method. We used solutions of Laplace’s equation for computation of specific contact resistance metal–n⁺ without contribution of interfaces n⁺-n and n-n⁺. The values of specific contact resistance were ~10⁻⁶ Ohm·cm². This method allows to control the manufacture process by monitoring the changes in electrophysical properties of the structure between etching cycles. Publications are based on the research provided by the grant support of the State Fund For Fundamental Research (project Ф73/118-2016). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes |
| spellingShingle |
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes Romanets, P.M. Belyaev, A.E. Sachenko, А.V. Boltovets, N.S. Basanets, V.V. Konakova, R.V. Slipokurov, V.S. Khodin, А.А. Pilipenko, V.А. Shynkarenko, V.V. Kudryk, Ya.Ya. |
| title_short |
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes |
| title_full |
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes |
| title_fullStr |
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes |
| title_full_unstemmed |
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes |
| title_sort |
theoretical and experimental modelling the specific resistance of vertical ohmic contacts au–ti–pd–n⁺-n-n⁺-si in impatt diodes |
| author |
Romanets, P.M. Belyaev, A.E. Sachenko, А.V. Boltovets, N.S. Basanets, V.V. Konakova, R.V. Slipokurov, V.S. Khodin, А.А. Pilipenko, V.А. Shynkarenko, V.V. Kudryk, Ya.Ya. |
| author_facet |
Romanets, P.M. Belyaev, A.E. Sachenko, А.V. Boltovets, N.S. Basanets, V.V. Konakova, R.V. Slipokurov, V.S. Khodin, А.А. Pilipenko, V.А. Shynkarenko, V.V. Kudryk, Ya.Ya. |
| publishDate |
2016 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The method of electrophysical diagnostic of n⁺-n-n⁺ structures at the etching stage of manufacturing process of power IMPATT diodes has been proposed. A numerical method for specific contacts resistance calculation of vertical ohmic contacts with a non-uniform doping level has been developed. Vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si both before and after etching were used for experimental checking this model. It has been computed the value of contact resistance in the interface metal–n⁺ with correction of contribution of n⁺-n and n-n⁺ resistances to the total resistance. The values of total effective resistances of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si may be calculated using the Cox–Strack method. We used solutions of Laplace’s equation for computation of specific contact resistance metal–n⁺ without contribution of interfaces n⁺-n and n-n⁺. The values of specific contact resistance were ~10⁻⁶ Ohm·cm². This method allows to control the manufacture process by monitoring the changes in electrophysical properties of the structure between etching cycles.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121657 |
| citation_txt |
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes / P.M. Romanets, A.E. Belyaev, А.V. Sachenko, N.S. Boltovets, V.V. Basanets, R.V. Konakova, V.S. Slipokurov, А.А. Khodin, V.А. Pilipenko, V.V. Shynkarenko, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 366-370. — Бібліогр.: 9 назв. — англ. |
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2025-12-07T17:31:58Z |
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