Long-term radiation-induced optical darkening effects in chalcogenide glasses
In this work, it is reported that the γ-irradiated (2.41 MGy accumulated dose) glasses As₂S₃ (∼2 mm thick) and Ge₁₅.₈As₂₁S₆₃.₂ (∼1 mm thick), both measured ∼10 years after γ-irradiation, exhibit radiation-induced optical darkening effect (i.e., long-wave shift of fundamental optical absorption edge)...
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| Datum: | 2016 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121681 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Long-term radiation-induced optical darkening effects in chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 395-398. — Бібліогр.: 20 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | In this work, it is reported that the γ-irradiated (2.41 MGy accumulated dose) glasses As₂S₃ (∼2 mm thick) and Ge₁₅.₈As₂₁S₆₃.₂ (∼1 mm thick), both measured ∼10 years after γ-irradiation, exhibit radiation-induced optical darkening effect (i.e., long-wave shift of fundamental optical absorption edge). In the case of As₂S₃ glass, the observed longterm radiation-induced optical darkening effect is well comparable with that reported in literature for γ-irradiated (∼3 MGy accumulated dose) glass As₂S₃ (1.5 mm thick), measured directly after γ-irradiation. In view of practical application, this finding demonstrates the possibilities for development of innovative chalcogenide glass based long-term dosimeter systems with stable and controlled parameters. A possible general criterion for mechanisms of long-term radiation-induced structural changes in chalcogenide glasses has been also considered. |
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