Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase
A modified vapor phase growth method to obtain high-resistive Cd1-xZnxTe
 single crystals (0 < x < 0.13) is presented. The single crystals (about 25 cm⁻³ in size)
 with natural faceting were grown by vapor transport in silica ampoules with a special
 shape us...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2005 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121862 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase / P. Feychuk, O. Kopyl, I. Pavlovich, L. Shcherbak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 110-113. — Бібліогр.: 15 назв. — англ. |