Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase
A modified vapor phase growth method to obtain high-resistive Cd1-xZnxTe
 single crystals (0 < x < 0.13) is presented. The single crystals (about 25 cm⁻³ in size)
 with natural faceting were grown by vapor transport in silica ampoules with a special
 shape us...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2005 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121862 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase / P. Feychuk, O. Kopyl, I. Pavlovich, L. Shcherbak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 110-113. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862699643732754432 |
|---|---|
| author | Feychuk, P. Kopyl, O. Pavlovich, I. Shcherbak, L. |
| author_facet | Feychuk, P. Kopyl, O. Pavlovich, I. Shcherbak, L. |
| citation_txt | Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase / P. Feychuk, O. Kopyl, I. Pavlovich, L. Shcherbak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 110-113. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A modified vapor phase growth method to obtain high-resistive Cd1-xZnxTe
single crystals (0 < x < 0.13) is presented. The single crystals (about 25 cm⁻³ in size)
with natural faceting were grown by vapor transport in silica ampoules with a special
shape using a polycrystalline ingot as initial source material. It is shown that
minimization of plastic deformation effect in preparation of the most structurally
perfect crystals is possible by a way of heat removal from the crystallization front by
radiation. The growth of high-resistive material required careful preparation of the
initial charge with close to stoichiometric composition. The obtained crystals were
successfully tested for creating the room temperature X-ray and gamma-ray detectors.
|
| first_indexed | 2025-12-07T16:36:04Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121862 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:36:04Z |
| publishDate | 2005 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Feychuk, P. Kopyl, O. Pavlovich, I. Shcherbak, L. 2017-06-19T12:44:18Z 2017-06-19T12:44:18Z 2005 Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase / P. Feychuk, O. Kopyl, I. Pavlovich, L. Shcherbak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 110-113. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 61.72y, 81.05, Dz; 81.10.Bk https://nasplib.isofts.kiev.ua/handle/123456789/121862 A modified vapor phase growth method to obtain high-resistive Cd1-xZnxTe
 single crystals (0 < x < 0.13) is presented. The single crystals (about 25 cm⁻³ in size)
 with natural faceting were grown by vapor transport in silica ampoules with a special
 shape using a polycrystalline ingot as initial source material. It is shown that
 minimization of plastic deformation effect in preparation of the most structurally
 perfect crystals is possible by a way of heat removal from the crystallization front by
 radiation. The growth of high-resistive material required careful preparation of the
 initial charge with close to stoichiometric composition. The obtained crystals were
 successfully tested for creating the room temperature X-ray and gamma-ray detectors. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase Article published earlier |
| spellingShingle | Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase Feychuk, P. Kopyl, O. Pavlovich, I. Shcherbak, L. |
| title | Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase |
| title_full | Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase |
| title_fullStr | Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase |
| title_full_unstemmed | Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase |
| title_short | Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase |
| title_sort | growing the high-resistive cd₁₋xznxte single crystals from a vapor phase |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121862 |
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