Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2005
• Main Authors: Feychuk, P., Kopyl, O., Pavlovich, I., Shcherbak, L.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121862
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase / P. Feychuk, O. Kopyl, I. Pavlovich, L. Shcherbak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 110-113. — Бібліогр.: 15 назв. — англ.

A modified vapor phase growth method to obtain high-resistive Cd1-xZnxTe
 single crystals (0 < x < 0.13) is presented. The single crystals (about 25 cm⁻³ in size)
 with natural faceting were grown by vapor transport in silica ampoules with a special
 shape us...