Obtaining silicon carbide via chemical vapor, plasma-chemical and sublimation methods

• Date: 2017
• Main Authors: Zhuravlov, А.Yu., Hovanskiy, N.А., Khizhnyak, D.A., Shirokov, B.M., Semenov, N.A., Shijan, А.V., Strigunovskiy, S.V., Yevsiukov, A.I., Shevtsov, A.B., Nazarenko, E.A., Pilipenko, N.N.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2017
• Series: Вопросы атомной науки и техники
• Subjects: Низкотемпературная плазма и плазменные технологии
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/122172
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Obtaining silicon carbide via chemical vapor, plasma-chemical and sublimation methods / А.Yu. Zhuravlov, N.А. Hovanskiy, D.A. Khizhnyak, B.M. Shirokov, N.A. Semenov, А.V. Shijan, S.V. Strigunovskiy, A.I. Yevsiukov, A.B. Shevtsov, E.A. Nazarenko, N.N. Pilipenko // Вопросы атомной науки и техники. — 2017. — № 1. — С. 191-194. — Бібліогр.: 10 назв. — англ.

In the present paper the results of studies on obtaining silicon carbide via chemical gas phase, plasma-chemical and sublimation methods are described. The thermodynamic analysis of chemical reactions of silicon carbide in the presence of hydrogen and without was provided. Was found that, without fr...