Surface plasmon-polariton resonance at diffraction of THz radiation on semiconductor gratings

• Veröffentlicht in: Физика низких температур
• Datum: 2016
• Hauptverfasser: Spevak, I.S., Kuzmenko, A.A., Tymchenko, M., Gavrikov, V.K., Shulga, V.M., Feng, J., Sun, H.B., Kamenev, Yu.E., Kats, A.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2016
• Schlagworte: К 75-летию открытия теплового сопротивления Капицы
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/129275
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Surface plasmon-polariton resonance at diffraction of THz radiation on semiconductor gratings / I.S. Spevak, A.A. Kuzmenko, M. Tymchenko, V.K. Gavrikov, V.M. Shulga, J. Feng, H.B. Sun, Yu.E. Kamenev, A.V. Kats // Физика низких температур. — 2016. — Т. 42, № 8. — С. 887-891. — Бібліогр.: 29 назв. — англ.

Resonance diffraction of THz hidrogen cyanide laser radiation on a semiconductor (InSb) grating is studied both experimentally and theoretically. The specular reflectivity suppression due to the resonance excitation of the THz surface plasmon-polariton is observed on a pure semiconductor grating and on semiconductor gratings covered with a thin dielectric layer. The dielectric coating of the grating results in the resonance shift and widening depending both on the layer thickness and dielectric properties. A simple analytical theory of the resonance diffraction on rather shallow gratings covered with a dielectric layer is presented, and the results are in a good accordance with the experimental data. Analytical expressions for the resonance shift and broadening are essential for the resonance properties understanding and useful for sensing data interpretation of the agents deposited on the grating surface.