Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere

• Опубліковано в: : Functional Materials
• Дата: 2006
• Автори: Dan`ko, A.Ya., Nizhankovsky, S.V., Kanischev, V.N., Sidelnikova, N.S., Adonkin, G.T., Puzikov, V.M., Grin, L.A.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: НТК «Інститут монокристалів» НАН України 2006
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/134176
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere / A.Ya.Dan`ko, S.V. Nizhankovsky, V.N. Kanischev, N.S. Sidelnikova, G.T. Adonkin, V.M. Puzikov, L.A. Grin // Functional Materials. — 2006. — Т. 13, № 3. — С. 426-431. — Бібліогр.: 9 назв. — англ.

The gas environment process formation in the furnace for sapphire growth by horizontal directional crystalliztion equipped by a graphite heating assembly has been studied during the evacuation and the inert gas (Ar, He) bleeding. The effect of the furnace blowing by the inert gas on concentration of reducing components (CO, H₂) and on optical properties of sapphire crystals grown in He atmosphere at 1 to 50 Torr pressure has been studied. The critical concentrations of the reducing components in the protective environment have benn determined for growing of sapphire intended for standart optical and optoelectronic applications.