Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere
The gas environment process formation in the furnace for sapphire growth by horizontal directional crystalliztion equipped by a graphite heating assembly has been studied during the evacuation and the inert gas (Ar, He) bleeding. The effect of the furnace blowing by the inert gas on concentration of...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2006 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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НТК «Інститут монокристалів» НАН України
2006
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/134176 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere / A.Ya.Dan`ko, S.V. Nizhankovsky, V.N. Kanischev, N.S. Sidelnikova, G.T. Adonkin, V.M. Puzikov, L.A. Grin // Functional Materials. — 2006. — Т. 13, № 3. — С. 426-431. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862730398715346944 |
|---|---|
| author | Dan`ko, A.Ya. Nizhankovsky, S.V. Kanischev, V.N. Sidelnikova, N.S. Adonkin, G.T. Puzikov, V.M. Grin, L.A. |
| author_facet | Dan`ko, A.Ya. Nizhankovsky, S.V. Kanischev, V.N. Sidelnikova, N.S. Adonkin, G.T. Puzikov, V.M. Grin, L.A. |
| citation_txt | Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere / A.Ya.Dan`ko, S.V. Nizhankovsky, V.N. Kanischev, N.S. Sidelnikova, G.T. Adonkin, V.M. Puzikov, L.A. Grin // Functional Materials. — 2006. — Т. 13, № 3. — С. 426-431. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | The gas environment process formation in the furnace for sapphire growth by horizontal directional crystalliztion equipped by a graphite heating assembly has been studied during the evacuation and the inert gas (Ar, He) bleeding. The effect of the furnace blowing by the inert gas on concentration of reducing components (CO, H₂) and on optical properties of sapphire crystals grown in He atmosphere at 1 to 50 Torr pressure has been studied. The critical concentrations of the reducing components in the protective environment have benn determined for growing of sapphire intended for standart optical and optoelectronic applications.
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| first_indexed | 2025-12-07T19:19:58Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-134176 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-07T19:19:58Z |
| publishDate | 2006 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Dan`ko, A.Ya. Nizhankovsky, S.V. Kanischev, V.N. Sidelnikova, N.S. Adonkin, G.T. Puzikov, V.M. Grin, L.A. 2018-06-12T17:06:34Z 2018-06-12T17:06:34Z 2006 Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere / A.Ya.Dan`ko, S.V. Nizhankovsky, V.N. Kanischev, N.S. Sidelnikova, G.T. Adonkin, V.M. Puzikov, L.A. Grin // Functional Materials. — 2006. — Т. 13, № 3. — С. 426-431. — Бібліогр.: 9 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/134176 The gas environment process formation in the furnace for sapphire growth by horizontal directional crystalliztion equipped by a graphite heating assembly has been studied during the evacuation and the inert gas (Ar, He) bleeding. The effect of the furnace blowing by the inert gas on concentration of reducing components (CO, H₂) and on optical properties of sapphire crystals grown in He atmosphere at 1 to 50 Torr pressure has been studied. The critical concentrations of the reducing components in the protective environment have benn determined for growing of sapphire intended for standart optical and optoelectronic applications. en НТК «Інститут монокристалів» НАН України Functional Materials Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere Вирощування сапфіру для оптики і оптоелектроніки методом ГСК у захисній атмосфері Article published earlier |
| spellingShingle | Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere Dan`ko, A.Ya. Nizhankovsky, S.V. Kanischev, V.N. Sidelnikova, N.S. Adonkin, G.T. Puzikov, V.M. Grin, L.A. |
| title | Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere |
| title_alt | Вирощування сапфіру для оптики і оптоелектроніки методом ГСК у захисній атмосфері |
| title_full | Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere |
| title_fullStr | Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere |
| title_full_unstemmed | Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere |
| title_short | Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere |
| title_sort | growing of sapphire for optics and optoelectronics by the hdc method in a protective atmosphere |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/134176 |
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