Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere

Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere

The gas environment process formation in the furnace for sapphire growth by horizontal directional crystalliztion equipped by a graphite heating assembly has been studied during the evacuation and the inert gas (Ar, He) bleeding. The effect of the furnace blowing by the inert gas on concentration of...

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Published in:Functional Materials
Date:2006
Main Authors: Dan`ko, A.Ya., Nizhankovsky, S.V., Kanischev, V.N., Sidelnikova, N.S., Adonkin, G.T., Puzikov, V.M., Grin, L.A.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2006
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/134176
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere / A.Ya.Dan`ko, S.V. Nizhankovsky, V.N. Kanischev, N.S. Sidelnikova, G.T. Adonkin, V.M. Puzikov, L.A. Grin // Functional Materials. — 2006. — Т. 13, № 3. — С. 426-431. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-134176
record_format dspace
spelling Dan`ko, A.Ya.
Nizhankovsky, S.V.
Kanischev, V.N.
Sidelnikova, N.S.
Adonkin, G.T.
Puzikov, V.M.
Grin, L.A.
2018-06-12T17:06:34Z
2018-06-12T17:06:34Z
2006
Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere / A.Ya.Dan`ko, S.V. Nizhankovsky, V.N. Kanischev, N.S. Sidelnikova, G.T. Adonkin, V.M. Puzikov, L.A. Grin // Functional Materials. — 2006. — Т. 13, № 3. — С. 426-431. — Бібліогр.: 9 назв. — англ.
1027-5495
https://nasplib.isofts.kiev.ua/handle/123456789/134176
The gas environment process formation in the furnace for sapphire growth by horizontal directional crystalliztion equipped by a graphite heating assembly has been studied during the evacuation and the inert gas (Ar, He) bleeding. The effect of the furnace blowing by the inert gas on concentration of reducing components (CO, H₂) and on optical properties of sapphire crystals grown in He atmosphere at 1 to 50 Torr pressure has been studied. The critical concentrations of the reducing components in the protective environment have benn determined for growing of sapphire intended for standart optical and optoelectronic applications.
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere
Вирощування сапфіру для оптики і оптоелектроніки методом ГСК у захисній атмосфері
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere
spellingShingle Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere
Dan`ko, A.Ya.
Nizhankovsky, S.V.
Kanischev, V.N.
Sidelnikova, N.S.
Adonkin, G.T.
Puzikov, V.M.
Grin, L.A.
title_short Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere
title_full Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere
title_fullStr Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere
title_full_unstemmed Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere
title_sort growing of sapphire for optics and optoelectronics by the hdc method in a protective atmosphere
author Dan`ko, A.Ya.
Nizhankovsky, S.V.
Kanischev, V.N.
Sidelnikova, N.S.
Adonkin, G.T.
Puzikov, V.M.
Grin, L.A.
author_facet Dan`ko, A.Ya.
Nizhankovsky, S.V.
Kanischev, V.N.
Sidelnikova, N.S.
Adonkin, G.T.
Puzikov, V.M.
Grin, L.A.
publishDate 2006
language English
container_title Functional Materials
publisher НТК «Інститут монокристалів» НАН України
format Article
title_alt Вирощування сапфіру для оптики і оптоелектроніки методом ГСК у захисній атмосфері
description The gas environment process formation in the furnace for sapphire growth by horizontal directional crystalliztion equipped by a graphite heating assembly has been studied during the evacuation and the inert gas (Ar, He) bleeding. The effect of the furnace blowing by the inert gas on concentration of reducing components (CO, H₂) and on optical properties of sapphire crystals grown in He atmosphere at 1 to 50 Torr pressure has been studied. The critical concentrations of the reducing components in the protective environment have benn determined for growing of sapphire intended for standart optical and optoelectronic applications.
issn 1027-5495
url https://nasplib.isofts.kiev.ua/handle/123456789/134176
citation_txt Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere / A.Ya.Dan`ko, S.V. Nizhankovsky, V.N. Kanischev, N.S. Sidelnikova, G.T. Adonkin, V.M. Puzikov, L.A. Grin // Functional Materials. — 2006. — Т. 13, № 3. — С. 426-431. — Бібліогр.: 9 назв. — англ.
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