Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere
The gas environment process formation in the furnace for sapphire growth by horizontal directional crystalliztion equipped by a graphite heating assembly has been studied during the evacuation and the inert gas (Ar, He) bleeding. The effect of the furnace blowing by the inert gas on concentration of...
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| Published in: | Functional Materials |
|---|---|
| Date: | 2006 |
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2006
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/134176 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere / A.Ya.Dan`ko, S.V. Nizhankovsky, V.N. Kanischev, N.S. Sidelnikova, G.T. Adonkin, V.M. Puzikov, L.A. Grin // Functional Materials. — 2006. — Т. 13, № 3. — С. 426-431. — Бібліогр.: 9 назв. — англ. |