Optimum Concentration of InSb Photodiode for Minimum Low Reverse Bias Leakage Current
We have investigated a relation between the impurity concentration and the leakage current for three types of InSb diodes. They were fabricated with different impurity concentrations on both sides of the junction such as p - n, p^+ - n; and p^+ - n+ in order to achieve the minimal level of noise. It...
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| Datum: | 2010 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Відділення фізики і астрономії НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/13432 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Optimum Concentration of InSb Photodiode for Minimum Low Reverse Bias Leakage Current / M. Moradi, M. Daraee, M. Hajian, M.A. Forghani, M. Rastgoo, A.O. Alipour // Укр. фіз. журн. — 2010. — Т. 55, № 4. — С. 422-425. — Бібліогр.: 14 назв. — англ. |