Optimum Concentration of InSb Photodiode for Minimum Low Reverse Bias Leakage Current

• Date: 2010
• Main Authors: Moradi, M., Daraee, M., Hajian, M., Forghani, M.A., Rastgoo, M., Alipour, A.O.
• Format: Article
• Language: English
• Published: Відділення фізики і астрономії НАН України 2010
• Subjects: Тверде тіло
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/13432
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Optimum Concentration of InSb Photodiode for Minimum Low Reverse Bias Leakage Current / M. Moradi, M. Daraee, M. Hajian, M.A. Forghani, M. Rastgoo, A.O. Alipour // Укр. фіз. журн. — 2010. — Т. 55, № 4. — С. 422-425. — Бібліогр.: 14 назв. — англ.

We have investigated a relation between the impurity concentration and the leakage current for three types of InSb diodes. They were fabricated with different impurity concentrations on both sides of the junction such as p - n, p^+ - n; and p^+ - n+ in order to achieve the minimal level of noise. It...