Analysis of the secondary breakdown of semiconductor materials on the basis of the nonlinear thermal conductivity equation
On the basis of the Wagner approach in the theory of thermal breakdown of dielectrics, the analogous phenomenon in semiconductor films is analyzed. It is done without account of the stabilization effect connected with an external resistance. Formulas giving values of the fused channel diameters and...
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| Veröffentlicht in: | Functional Materials |
|---|---|
| Datum: | 2005 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
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НТК «Інститут монокристалів» НАН України
2005
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/134780 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Analysis of the secondary breakdown of semiconductor materials on the basis of the nonlinear thermal conductivity equation / N.V. Andreyeva, Yu.P. Virchenko // Functional Materials. — 2005. — Т. 12, № 2. — С. 190-195. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862670107961982976 |
|---|---|
| author | Andreyeva, N.V. Virchenko, Yu.P. |
| author_facet | Andreyeva, N.V. Virchenko, Yu.P. |
| citation_txt | Analysis of the secondary breakdown of semiconductor materials on the basis of the nonlinear thermal conductivity equation / N.V. Andreyeva, Yu.P. Virchenko // Functional Materials. — 2005. — Т. 12, № 2. — С. 190-195. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | On the basis of the Wagner approach in the theory of thermal breakdown of dielectrics, the analogous phenomenon in semiconductor films is analyzed. It is done without account of the stabilization effect connected with an external resistance. Formulas giving values of the fused channel diameters and the breakdown time are obtained.
На основе подхода Вагнера в теории теплового пробоя диэлектриков проанализировано явление теплового пробоя полупроводниковой пленки без учета эффекта стабилизации внешним сопротивлением. Получены формулы для диаметров проплавленных каналов и времени пробоя.
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| first_indexed | 2025-12-07T15:29:30Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-134780 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-07T15:29:30Z |
| publishDate | 2005 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Andreyeva, N.V. Virchenko, Yu.P. 2018-06-14T08:43:40Z 2018-06-14T08:43:40Z 2005 Analysis of the secondary breakdown of semiconductor materials on the basis of the nonlinear thermal conductivity equation / N.V. Andreyeva, Yu.P. Virchenko // Functional Materials. — 2005. — Т. 12, № 2. — С. 190-195. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/134780 On the basis of the Wagner approach in the theory of thermal breakdown of dielectrics, the analogous phenomenon in semiconductor films is analyzed. It is done without account of the stabilization effect connected with an external resistance. Formulas giving values of the fused channel diameters and the breakdown time are obtained. На основе подхода Вагнера в теории теплового пробоя диэлектриков проанализировано явление теплового пробоя полупроводниковой пленки без учета эффекта стабилизации внешним сопротивлением. Получены формулы для диаметров проплавленных каналов и времени пробоя. en НТК «Інститут монокристалів» НАН України Functional Materials Analysis of the secondary breakdown of semiconductor materials on the basis of the nonlinear thermal conductivity equation Article published earlier |
| spellingShingle | Analysis of the secondary breakdown of semiconductor materials on the basis of the nonlinear thermal conductivity equation Andreyeva, N.V. Virchenko, Yu.P. |
| title | Analysis of the secondary breakdown of semiconductor materials on the basis of the nonlinear thermal conductivity equation |
| title_full | Analysis of the secondary breakdown of semiconductor materials on the basis of the nonlinear thermal conductivity equation |
| title_fullStr | Analysis of the secondary breakdown of semiconductor materials on the basis of the nonlinear thermal conductivity equation |
| title_full_unstemmed | Analysis of the secondary breakdown of semiconductor materials on the basis of the nonlinear thermal conductivity equation |
| title_short | Analysis of the secondary breakdown of semiconductor materials on the basis of the nonlinear thermal conductivity equation |
| title_sort | analysis of the secondary breakdown of semiconductor materials on the basis of the nonlinear thermal conductivity equation |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/134780 |
| work_keys_str_mv | AT andreyevanv analysisofthesecondarybreakdownofsemiconductormaterialsonthebasisofthenonlinearthermalconductivityequation AT virchenkoyup analysisofthesecondarybreakdownofsemiconductormaterialsonthebasisofthenonlinearthermalconductivityequation |