Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air

• Опубліковано в: : Functional Materials
• Дата: 2004
• Автори: Balitskii, O.A., Savchyn, V.P., Savchyn, P.V., Fiyala, Ya.M.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2004
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/134813
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air / O.A. Balitskii, V.P. Savchyn, P.V. Savchyn, Ya.M. Fiyala // Functional Materials. — 2005. — Т. 12, № 2. — С. 206-211. — Бібліогр.: 20 назв. — англ.

The oxidation processes of indium and gallium monotellurides have been discussed. The oxidation has been established to result in formation of additional phases with higher tellurium content, namely, gallium and indium sesquitellurides, respectively. Исслeдован фазовый состав приповeрхностных слоeв...