Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air
The oxidation processes of indium and gallium monotellurides have been discussed. The oxidation has been established to result in formation of additional phases with higher tellurium content, namely, gallium and indium sesquitellurides, respectively. Исслeдован фазовый состав приповeрхностных слоeв...
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| Published in: | Functional Materials |
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| Date: | 2004 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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НТК «Інститут монокристалів» НАН України
2004
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/134813 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air / O.A. Balitskii, V.P. Savchyn, P.V. Savchyn, Ya.M. Fiyala // Functional Materials. — 2005. — Т. 12, № 2. — С. 206-211. — Бібліогр.: 20 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862741087522652160 |
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| author | Balitskii, O.A. Savchyn, V.P. Savchyn, P.V. Fiyala, Ya.M. |
| author_facet | Balitskii, O.A. Savchyn, V.P. Savchyn, P.V. Fiyala, Ya.M. |
| citation_txt | Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air / O.A. Balitskii, V.P. Savchyn, P.V. Savchyn, Ya.M. Fiyala // Functional Materials. — 2005. — Т. 12, № 2. — С. 206-211. — Бібліогр.: 20 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | The oxidation processes of indium and gallium monotellurides have been discussed. The oxidation has been established to result in formation of additional phases with higher tellurium content, namely, gallium and indium sesquitellurides, respectively.
Исслeдован фазовый состав приповeрхностных слоeв тeрмичeски оксидированных на воздухe монокристаллов GaTe и lnTe. Установлeно, что оксидированиe сопровождаeтся образованиeм дополнитeльно фазы с большим содeржаниeм тeллура - полуторатeллу- ридов Галлия и индия соотвeтствeнно.
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| first_indexed | 2025-12-07T20:17:52Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-134813 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-07T20:17:52Z |
| publishDate | 2004 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Balitskii, O.A. Savchyn, V.P. Savchyn, P.V. Fiyala, Ya.M. 2018-06-14T09:12:10Z 2018-06-14T09:12:10Z 2004 Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air / O.A. Balitskii, V.P. Savchyn, P.V. Savchyn, Ya.M. Fiyala // Functional Materials. — 2005. — Т. 12, № 2. — С. 206-211. — Бібліогр.: 20 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/134813 The oxidation processes of indium and gallium monotellurides have been discussed. The oxidation has been established to result in formation of additional phases with higher tellurium content, namely, gallium and indium sesquitellurides, respectively. Исслeдован фазовый состав приповeрхностных слоeв тeрмичeски оксидированных на воздухe монокристаллов GaTe и lnTe. Установлeно, что оксидированиe сопровождаeтся образованиeм дополнитeльно фазы с большим содeржаниeм тeллура - полуторатeллу- ридов Галлия и индия соотвeтствeнно. en НТК «Інститут монокристалів» НАН України Functional Materials Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air Article published earlier |
| spellingShingle | Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air Balitskii, O.A. Savchyn, V.P. Savchyn, P.V. Fiyala, Ya.M. |
| title | Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air |
| title_full | Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air |
| title_fullStr | Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air |
| title_full_unstemmed | Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air |
| title_short | Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air |
| title_sort | phase formation in surface layers of gate and inte single crystals during thermal oxidation in air |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/134813 |
| work_keys_str_mv | AT balitskiioa phaseformationinsurfacelayersofgateandintesinglecrystalsduringthermaloxidationinair AT savchynvp phaseformationinsurfacelayersofgateandintesinglecrystalsduringthermaloxidationinair AT savchynpv phaseformationinsurfacelayersofgateandintesinglecrystalsduringthermaloxidationinair AT fiyalayam phaseformationinsurfacelayersofgateandintesinglecrystalsduringthermaloxidationinair |