Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air
The oxidation processes of indium and gallium monotellurides have been discussed. The oxidation has been established to result in formation of additional phases with higher tellurium content, namely, gallium and indium sesquitellurides, respectively. Исслeдован фазовый состав приповeрхностных слоeв...
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| Date: | 2004 |
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| Language: | English |
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НТК «Інститут монокристалів» НАН України
2004
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/134813 |
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| Cite this: | Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air / O.A. Balitskii, V.P. Savchyn, P.V. Savchyn, Ya.M. Fiyala // Functional Materials. — 2005. — Т. 12, № 2. — С. 206-211. — Бібліогр.: 20 назв. — англ. |
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Balitskii, O.A. Savchyn, V.P. Savchyn, P.V. Fiyala, Ya.M. 2018-06-14T09:12:10Z 2018-06-14T09:12:10Z 2004 Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air / O.A. Balitskii, V.P. Savchyn, P.V. Savchyn, Ya.M. Fiyala // Functional Materials. — 2005. — Т. 12, № 2. — С. 206-211. — Бібліогр.: 20 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/134813 The oxidation processes of indium and gallium monotellurides have been discussed. The oxidation has been established to result in formation of additional phases with higher tellurium content, namely, gallium and indium sesquitellurides, respectively. Исслeдован фазовый состав приповeрхностных слоeв тeрмичeски оксидированных на воздухe монокристаллов GaTe и lnTe. Установлeно, что оксидированиe сопровождаeтся образованиeм дополнитeльно фазы с большим содeржаниeм тeллура - полуторатeллу- ридов Галлия и индия соотвeтствeнно. en НТК «Інститут монокристалів» НАН України Functional Materials Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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| title |
Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air |
| spellingShingle |
Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air Balitskii, O.A. Savchyn, V.P. Savchyn, P.V. Fiyala, Ya.M. |
| title_short |
Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air |
| title_full |
Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air |
| title_fullStr |
Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air |
| title_full_unstemmed |
Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air |
| title_sort |
phase formation in surface layers of gate and inte single crystals during thermal oxidation in air |
| author |
Balitskii, O.A. Savchyn, V.P. Savchyn, P.V. Fiyala, Ya.M. |
| author_facet |
Balitskii, O.A. Savchyn, V.P. Savchyn, P.V. Fiyala, Ya.M. |
| publishDate |
2004 |
| language |
English |
| container_title |
Functional Materials |
| publisher |
НТК «Інститут монокристалів» НАН України |
| format |
Article |
| description |
The oxidation processes of indium and gallium monotellurides have been discussed. The oxidation has been established to result in formation of additional phases with higher tellurium content, namely, gallium and indium sesquitellurides, respectively.
Исслeдован фазовый состав приповeрхностных слоeв тeрмичeски оксидированных на воздухe монокристаллов GaTe и lnTe. Установлeно, что оксидированиe сопровождаeтся образованиeм дополнитeльно фазы с большим содeржаниeм тeллура - полуторатeллу- ридов Галлия и индия соотвeтствeнно.
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| issn |
1027-5495 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/134813 |
| citation_txt |
Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air / O.A. Balitskii, V.P. Savchyn, P.V. Savchyn, Ya.M. Fiyala // Functional Materials. — 2005. — Т. 12, № 2. — С. 206-211. — Бібліогр.: 20 назв. — англ. |
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| first_indexed |
2025-12-07T20:17:52Z |
| last_indexed |
2025-12-07T20:17:52Z |
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