Growth of crystals with bent crystalline lattice in amorphous semiconductor films

• Datum: 2008
• Hauptverfasser: Bagmut, A.G., Grigorov, S.N., Kosevich, V.M., Lyubchenko, E.A., Nikolaychuk, G.P., Samoylenko, D.N.
• Format: Artikel
• Sprache: English
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2008
• Schriftenreihe: Functional Materials
• Schlagworte: Characterization and properties
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/135275
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Growth of crystals with bent crystalline lattice in amorphous semiconductor films // A.G. Bagmut, S.N. Grigorov, V.M. Kosevich, E.A. Lyubchenko, G.P. Nikolaychuk, D.N. Samoylenko // Functional Materials. — 2008. — Т. 15, № 3. — С. 332-337. — Бібліогр.: 11 назв. — англ.

Crystallization of amorphous films of gallium, indium and antimony chalkogenides (Sb₂S₃, ln₂Se₃, Ga₂Te₃ and Sb₂Te₃) has been investigated to elucidate the crystallization character and to determine conditions favoring the growth of crystals with bent crystalline lattice. It has been found that the lattice bending of crystals formed during the crystallization of amorphous films under heating by electron beam in the electron microscope column is observed in crystals with orthorhombic and hexagonal lattices (Sb₂S₃ and Sb₂Te₃). The bending absolute magnitudes are larger in crystals with hexagonal lattice where they rich 160 grad/μm. The crystals with bent lattice appear mainly at fast heating of amorphous film when the rate of crystal growth in the film plane exceeds 1 μm/s. The crystal lattice bending increases as the amorphous film thickness diminishes. When heating slowly Sb₂S₃ films by electron beam, it has been revealed that at initial stages, very thin crystals with unbent lattice appear in the film subsurface layer; crystal lattice bending takes place during the crystal thickness increase.