Luminescence of nanostructures based on semiconductor nitrides

Light-emitting diode structures on the basis of (Al, Ga, ln)N solid solutions with and without superlattices were investigated. Experiments in a wide range of temperatures (10—300 K) and noise currents (10 nA — 2 mA) were performed. It was found that the structure with superlattices has a higher sta...

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Bibliographic Details
Published in:Functional Materials
Date:2012
Main Authors: Menkovich, E.A., Tarasov, S.A., Lamkin, I.A.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2012
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/135304
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Luminescence of nanostructures based on semiconductor nitrides / E.A. Menkovich, S.A. Tarasov, I.A. Lamkin // Functional Materials. — 2012. — Т. 19, № 2. — С. 223-237. — Бібліогр.: 6 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine