Luminescence of nanostructures based on semiconductor nitrides
Light-emitting diode structures on the basis of (Al, Ga, ln)N solid solutions with and without superlattices were investigated. Experiments in a wide range of temperatures (10—300 K) and noise currents (10 nA — 2 mA) were performed. It was found that the structure with superlattices has a higher sta...
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| Published in: | Functional Materials |
|---|---|
| Date: | 2012 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2012
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/135304 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Luminescence of nanostructures based on semiconductor nitrides / E.A. Menkovich, S.A. Tarasov, I.A. Lamkin // Functional Materials. — 2012. — Т. 19, № 2. — С. 223-237. — Бібліогр.: 6 назв. — англ. |