Luminescence of nanostructures based on semiconductor nitrides
Light-emitting diode structures on the basis of (Al, Ga, ln)N solid solutions with and without superlattices were investigated. Experiments in a wide range of temperatures (10—300 K) and noise currents (10 nA — 2 mA) were performed. It was found that the structure with superlattices has a higher sta...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2012 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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НТК «Інститут монокристалів» НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/135304 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Luminescence of nanostructures based on semiconductor nitrides / E.A. Menkovich, S.A. Tarasov, I.A. Lamkin // Functional Materials. — 2012. — Т. 19, № 2. — С. 223-237. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862657566471880704 |
|---|---|
| author | Menkovich, E.A. Tarasov, S.A. Lamkin, I.A. |
| author_facet | Menkovich, E.A. Tarasov, S.A. Lamkin, I.A. |
| citation_txt | Luminescence of nanostructures based on semiconductor nitrides / E.A. Menkovich, S.A. Tarasov, I.A. Lamkin // Functional Materials. — 2012. — Т. 19, № 2. — С. 223-237. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | Light-emitting diode structures on the basis of (Al, Ga, ln)N solid solutions with and without superlattices were investigated. Experiments in a wide range of temperatures (10—300 K) and noise currents (10 nA — 2 mA) were performed. It was found that the structure with superlattices has a higher stability and better work performance. Apparently, the use of superlattices can compensate for the elastic stresses and piezoelectric fields at the heterointerface. This compensation reduces the formation of dislocations in the structures with superlattices, which increases the intensity of radiation and decreases self-heating effects.
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| first_indexed | 2025-12-02T06:17:23Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-135304 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-02T06:17:23Z |
| publishDate | 2012 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Menkovich, E.A. Tarasov, S.A. Lamkin, I.A. 2018-06-14T18:46:38Z 2018-06-14T18:46:38Z 2012 Luminescence of nanostructures based on semiconductor nitrides / E.A. Menkovich, S.A. Tarasov, I.A. Lamkin // Functional Materials. — 2012. — Т. 19, № 2. — С. 223-237. — Бібліогр.: 6 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/135304 Light-emitting diode structures on the basis of (Al, Ga, ln)N solid solutions with and without superlattices were investigated. Experiments in a wide range of temperatures (10—300 K) and noise currents (10 nA — 2 mA) were performed. It was found that the structure with superlattices has a higher stability and better work performance. Apparently, the use of superlattices can compensate for the elastic stresses and piezoelectric fields at the heterointerface. This compensation reduces the formation of dislocations in the structures with superlattices, which increases the intensity of radiation and decreases self-heating effects. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Luminescence of nanostructures based on semiconductor nitrides Люмінесценція наноструктур на основі напівпровідникових нітридов Article published earlier |
| spellingShingle | Luminescence of nanostructures based on semiconductor nitrides Menkovich, E.A. Tarasov, S.A. Lamkin, I.A. Characterization and properties |
| title | Luminescence of nanostructures based on semiconductor nitrides |
| title_alt | Люмінесценція наноструктур на основі напівпровідникових нітридов |
| title_full | Luminescence of nanostructures based on semiconductor nitrides |
| title_fullStr | Luminescence of nanostructures based on semiconductor nitrides |
| title_full_unstemmed | Luminescence of nanostructures based on semiconductor nitrides |
| title_short | Luminescence of nanostructures based on semiconductor nitrides |
| title_sort | luminescence of nanostructures based on semiconductor nitrides |
| topic | Characterization and properties |
| topic_facet | Characterization and properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/135304 |
| work_keys_str_mv | AT menkovichea luminescenceofnanostructuresbasedonsemiconductornitrides AT tarasovsa luminescenceofnanostructuresbasedonsemiconductornitrides AT lamkinia luminescenceofnanostructuresbasedonsemiconductornitrides AT menkovichea lûmínescencíânanostrukturnaosnovínapívprovídnikovihnítridov AT tarasovsa lûmínescencíânanostrukturnaosnovínapívprovídnikovihnítridov AT lamkinia lûmínescencíânanostrukturnaosnovínapívprovídnikovihnítridov |