Luminescence of nanostructures based on semiconductor nitrides

• Опубліковано в: : Functional Materials
• Дата: 2012
• Автори: Menkovich, E.A., Tarasov, S.A., Lamkin, I.A.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: НТК «Інститут монокристалів» НАН України 2012
• Теми: Characterization and properties
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/135304
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Luminescence of nanostructures based on semiconductor nitrides / E.A. Menkovich, S.A. Tarasov, I.A. Lamkin // Functional Materials. — 2012. — Т. 19, № 2. — С. 223-237. — Бібліогр.: 6 назв. — англ.

Light-emitting diode structures on the basis of (Al, Ga, ln)N solid solutions with and without superlattices were investigated. Experiments in a wide range of temperatures (10—300 K) and noise currents (10 nA — 2 mA) were performed. It was found that the structure with superlattices has a higher sta...