HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe
By using the EPR method we show that the introduction of the fourth component as the cadmium (Cd) into the solid solution CrₓHg₁₋ₓSe allows for increasing the transition temperature of magnetic ordering in this compound. The resistance, magnetoresistance, and current-voltage characteristics of new h...
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| Datum: | 2012 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2012
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| Schriftenreihe: | Functional Materials |
| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/135327 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe / B. Bekirov, I. Ivanchenko, N. Popenko, V. Tkach // Functional Materials. — 2012. — Т. 19, № 3. — С. 319-324. — Бібліогр.: 19 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | By using the EPR method we show that the introduction of the fourth component as the cadmium (Cd) into the solid solution CrₓHg₁₋ₓSe allows for increasing the transition temperature of magnetic ordering in this compound. The resistance, magnetoresistance, and current-voltage characteristics of new heterojunctions HgCdCrSe/HgMnTe are measured as a function of temperature and external magnetic field. The appearance of nonlinear plot on the reverse branch of experimental current-voltage characteristic at a temperature below the temperature of magnetic ordering can be explained by the appearance of spin-polarized current. |
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