Strain induced effects in p-type silicon whiskers at low temperatures

• Опубліковано в: : Functional Materials
• Дата: 2012
• Автори: Druzhinin, A.A., Maryamova, I.I., Kutrakov, O.P., Liakh-Kaguy, N.S., Palewski, T.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2012
• Теми: Characterization and properties
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/135328
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Strain induced effects in p-type silicon whiskers at low temperatures / A.A. Druzhinin, I.I. Maryamova, O.P. Kutrakov, N.S. Liakh-Kaguy, T. Palewski // Functional Materials. — 2012. — Т. 19, № 3. — С. 325-329. — Бібліогр.: 11 назв. — англ.

Complex studies of strain induced effects in boron doped p-type silicon whiskers with [111] crystallographic direction in the wide temperature range 4.2 - 300 K at magnetic fields up to 14 T and under high-energy electron irradiation were carried out. The peculiarities of piezomagnetoresistance of S...