Strain induced effects in p-type silicon whiskers at low temperatures

Complex studies of strain induced effects in boron doped p-type silicon whiskers with [111] crystallographic direction in the wide temperature range 4.2 - 300 K at magnetic fields up to 14 T and under high-energy electron irradiation were carried out. The peculiarities of piezomagnetoresistance of S...

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Опубліковано в: :Functional Materials
Дата:2012
Автори: Druzhinin, A.A., Maryamova, I.I., Kutrakov, O.P., Liakh-Kaguy, N.S., Palewski, T.
Формат: Стаття
Мова:English
Опубліковано: НТК «Інститут монокристалів» НАН України 2012
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Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/135328
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Strain induced effects in p-type silicon whiskers at low temperatures / A.A. Druzhinin, I.I. Maryamova, O.P. Kutrakov, N.S. Liakh-Kaguy, T. Palewski // Functional Materials. — 2012. — Т. 19, № 3. — С. 325-329. — Бібліогр.: 11 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-135328
record_format dspace
spelling Druzhinin, A.A.
Maryamova, I.I.
Kutrakov, O.P.
Liakh-Kaguy, N.S.
Palewski, T.
2018-06-14T19:01:19Z
2018-06-14T19:01:19Z
2012
Strain induced effects in p-type silicon whiskers at low temperatures / A.A. Druzhinin, I.I. Maryamova, O.P. Kutrakov, N.S. Liakh-Kaguy, T. Palewski // Functional Materials. — 2012. — Т. 19, № 3. — С. 325-329. — Бібліогр.: 11 назв. — англ.
1027-5495
https://nasplib.isofts.kiev.ua/handle/123456789/135328
Complex studies of strain induced effects in boron doped p-type silicon whiskers with [111] crystallographic direction in the wide temperature range 4.2 - 300 K at magnetic fields up to 14 T and under high-energy electron irradiation were carried out. The peculiarities of piezomagnetoresistance of Si whiskers heavily boron doped and with boron concentration in the vicinity of metal-insulator transition were determined. The influence of electron irradiation with energy 10 MeV and fluence Φ = 5*10¹⁷ el/cm ² on the gauge factor of boron doped Si whiskers at low temperatures have been also studied. High-sensitive piezoresistive sensor to measure pressure of liquid helium on the basis of silicon whiskers with a giant gauge factor was developed. Heavily doped Si whiskers with classic piezoresistance have been successfully used in mechanical sensors operating in the wide temperature range 4.2 - 300 K.
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Characterization and properties
Strain induced effects in p-type silicon whiskers at low temperatures
Деформаційно стимульовані ефекти у ниткоподібних кристалах кремнію p-типу за низьких температур
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Strain induced effects in p-type silicon whiskers at low temperatures
spellingShingle Strain induced effects in p-type silicon whiskers at low temperatures
Druzhinin, A.A.
Maryamova, I.I.
Kutrakov, O.P.
Liakh-Kaguy, N.S.
Palewski, T.
Characterization and properties
title_short Strain induced effects in p-type silicon whiskers at low temperatures
title_full Strain induced effects in p-type silicon whiskers at low temperatures
title_fullStr Strain induced effects in p-type silicon whiskers at low temperatures
title_full_unstemmed Strain induced effects in p-type silicon whiskers at low temperatures
title_sort strain induced effects in p-type silicon whiskers at low temperatures
author Druzhinin, A.A.
Maryamova, I.I.
Kutrakov, O.P.
Liakh-Kaguy, N.S.
Palewski, T.
author_facet Druzhinin, A.A.
Maryamova, I.I.
Kutrakov, O.P.
Liakh-Kaguy, N.S.
Palewski, T.
topic Characterization and properties
topic_facet Characterization and properties
publishDate 2012
language English
container_title Functional Materials
publisher НТК «Інститут монокристалів» НАН України
format Article
title_alt Деформаційно стимульовані ефекти у ниткоподібних кристалах кремнію p-типу за низьких температур
description Complex studies of strain induced effects in boron doped p-type silicon whiskers with [111] crystallographic direction in the wide temperature range 4.2 - 300 K at magnetic fields up to 14 T and under high-energy electron irradiation were carried out. The peculiarities of piezomagnetoresistance of Si whiskers heavily boron doped and with boron concentration in the vicinity of metal-insulator transition were determined. The influence of electron irradiation with energy 10 MeV and fluence Φ = 5*10¹⁷ el/cm ² on the gauge factor of boron doped Si whiskers at low temperatures have been also studied. High-sensitive piezoresistive sensor to measure pressure of liquid helium on the basis of silicon whiskers with a giant gauge factor was developed. Heavily doped Si whiskers with classic piezoresistance have been successfully used in mechanical sensors operating in the wide temperature range 4.2 - 300 K.
issn 1027-5495
url https://nasplib.isofts.kiev.ua/handle/123456789/135328
citation_txt Strain induced effects in p-type silicon whiskers at low temperatures / A.A. Druzhinin, I.I. Maryamova, O.P. Kutrakov, N.S. Liakh-Kaguy, T. Palewski // Functional Materials. — 2012. — Т. 19, № 3. — С. 325-329. — Бібліогр.: 11 назв. — англ.
work_keys_str_mv AT druzhininaa straininducedeffectsinptypesiliconwhiskersatlowtemperatures
AT maryamovaii straininducedeffectsinptypesiliconwhiskersatlowtemperatures
AT kutrakovop straininducedeffectsinptypesiliconwhiskersatlowtemperatures
AT liakhkaguyns straininducedeffectsinptypesiliconwhiskersatlowtemperatures
AT palewskit straininducedeffectsinptypesiliconwhiskersatlowtemperatures
AT druzhininaa deformacíinostimulʹovaníefektiunitkopodíbnihkristalahkremníûptipuzanizʹkihtemperatur
AT maryamovaii deformacíinostimulʹovaníefektiunitkopodíbnihkristalahkremníûptipuzanizʹkihtemperatur
AT kutrakovop deformacíinostimulʹovaníefektiunitkopodíbnihkristalahkremníûptipuzanizʹkihtemperatur
AT liakhkaguyns deformacíinostimulʹovaníefektiunitkopodíbnihkristalahkremníûptipuzanizʹkihtemperatur
AT palewskit deformacíinostimulʹovaníefektiunitkopodíbnihkristalahkremníûptipuzanizʹkihtemperatur
first_indexed 2025-12-07T13:25:15Z
last_indexed 2025-12-07T13:25:15Z
_version_ 1850856089562644480