Strain induced effects in p-type silicon whiskers at low temperatures
Complex studies of strain induced effects in boron doped p-type silicon whiskers with [111] crystallographic direction in the wide temperature range 4.2 - 300 K at magnetic fields up to 14 T and under high-energy electron irradiation were carried out. The peculiarities of piezomagnetoresistance of S...
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| Опубліковано в: : | Functional Materials |
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| Дата: | 2012 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2012
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/135328 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Strain induced effects in p-type silicon whiskers at low temperatures / A.A. Druzhinin, I.I. Maryamova, O.P. Kutrakov, N.S. Liakh-Kaguy, T. Palewski // Functional Materials. — 2012. — Т. 19, № 3. — С. 325-329. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-135328 |
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Druzhinin, A.A. Maryamova, I.I. Kutrakov, O.P. Liakh-Kaguy, N.S. Palewski, T. 2018-06-14T19:01:19Z 2018-06-14T19:01:19Z 2012 Strain induced effects in p-type silicon whiskers at low temperatures / A.A. Druzhinin, I.I. Maryamova, O.P. Kutrakov, N.S. Liakh-Kaguy, T. Palewski // Functional Materials. — 2012. — Т. 19, № 3. — С. 325-329. — Бібліогр.: 11 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/135328 Complex studies of strain induced effects in boron doped p-type silicon whiskers with [111] crystallographic direction in the wide temperature range 4.2 - 300 K at magnetic fields up to 14 T and under high-energy electron irradiation were carried out. The peculiarities of piezomagnetoresistance of Si whiskers heavily boron doped and with boron concentration in the vicinity of metal-insulator transition were determined. The influence of electron irradiation with energy 10 MeV and fluence Φ = 5*10¹⁷ el/cm ² on the gauge factor of boron doped Si whiskers at low temperatures have been also studied. High-sensitive piezoresistive sensor to measure pressure of liquid helium on the basis of silicon whiskers with a giant gauge factor was developed. Heavily doped Si whiskers with classic piezoresistance have been successfully used in mechanical sensors operating in the wide temperature range 4.2 - 300 K. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Strain induced effects in p-type silicon whiskers at low temperatures Деформаційно стимульовані ефекти у ниткоподібних кристалах кремнію p-типу за низьких температур Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Strain induced effects in p-type silicon whiskers at low temperatures |
| spellingShingle |
Strain induced effects in p-type silicon whiskers at low temperatures Druzhinin, A.A. Maryamova, I.I. Kutrakov, O.P. Liakh-Kaguy, N.S. Palewski, T. Characterization and properties |
| title_short |
Strain induced effects in p-type silicon whiskers at low temperatures |
| title_full |
Strain induced effects in p-type silicon whiskers at low temperatures |
| title_fullStr |
Strain induced effects in p-type silicon whiskers at low temperatures |
| title_full_unstemmed |
Strain induced effects in p-type silicon whiskers at low temperatures |
| title_sort |
strain induced effects in p-type silicon whiskers at low temperatures |
| author |
Druzhinin, A.A. Maryamova, I.I. Kutrakov, O.P. Liakh-Kaguy, N.S. Palewski, T. |
| author_facet |
Druzhinin, A.A. Maryamova, I.I. Kutrakov, O.P. Liakh-Kaguy, N.S. Palewski, T. |
| topic |
Characterization and properties |
| topic_facet |
Characterization and properties |
| publishDate |
2012 |
| language |
English |
| container_title |
Functional Materials |
| publisher |
НТК «Інститут монокристалів» НАН України |
| format |
Article |
| title_alt |
Деформаційно стимульовані ефекти у ниткоподібних кристалах кремнію p-типу за низьких температур |
| description |
Complex studies of strain induced effects in boron doped p-type silicon whiskers with [111] crystallographic direction in the wide temperature range 4.2 - 300 K at magnetic fields up to 14 T and under high-energy electron irradiation were carried out. The peculiarities of piezomagnetoresistance of Si whiskers heavily boron doped and with boron concentration in the vicinity of metal-insulator transition were determined. The influence of electron irradiation with energy 10 MeV and fluence Φ = 5*10¹⁷ el/cm ² on the gauge factor of boron doped Si whiskers at low temperatures have been also studied. High-sensitive piezoresistive sensor to measure pressure of liquid helium on the basis of silicon whiskers with a giant gauge factor was developed. Heavily doped Si whiskers with classic piezoresistance have been successfully used in mechanical sensors operating in the wide temperature range 4.2 - 300 K.
|
| issn |
1027-5495 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/135328 |
| citation_txt |
Strain induced effects in p-type silicon whiskers at low temperatures / A.A. Druzhinin, I.I. Maryamova, O.P. Kutrakov, N.S. Liakh-Kaguy, T. Palewski // Functional Materials. — 2012. — Т. 19, № 3. — С. 325-329. — Бібліогр.: 11 назв. — англ. |
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| first_indexed |
2025-12-07T13:25:15Z |
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2025-12-07T13:25:15Z |
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