Strain induced effects in p-type silicon whiskers at low temperatures
Complex studies of strain induced effects in boron doped p-type silicon whiskers with [111] crystallographic direction in the wide temperature range 4.2 - 300 K at magnetic fields up to 14 T and under high-energy electron irradiation were carried out. The peculiarities of piezomagnetoresistance of S...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2012 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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НТК «Інститут монокристалів» НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/135328 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Strain induced effects in p-type silicon whiskers at low temperatures / A.A. Druzhinin, I.I. Maryamova, O.P. Kutrakov, N.S. Liakh-Kaguy, T. Palewski // Functional Materials. — 2012. — Т. 19, № 3. — С. 325-329. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862621625701105664 |
|---|---|
| author | Druzhinin, A.A. Maryamova, I.I. Kutrakov, O.P. Liakh-Kaguy, N.S. Palewski, T. |
| author_facet | Druzhinin, A.A. Maryamova, I.I. Kutrakov, O.P. Liakh-Kaguy, N.S. Palewski, T. |
| citation_txt | Strain induced effects in p-type silicon whiskers at low temperatures / A.A. Druzhinin, I.I. Maryamova, O.P. Kutrakov, N.S. Liakh-Kaguy, T. Palewski // Functional Materials. — 2012. — Т. 19, № 3. — С. 325-329. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | Complex studies of strain induced effects in boron doped p-type silicon whiskers with [111] crystallographic direction in the wide temperature range 4.2 - 300 K at magnetic fields up to 14 T and under high-energy electron irradiation were carried out. The peculiarities of piezomagnetoresistance of Si whiskers heavily boron doped and with boron concentration in the vicinity of metal-insulator transition were determined. The influence of electron irradiation with energy 10 MeV and fluence Φ = 5*10¹⁷ el/cm ² on the gauge factor of boron doped Si whiskers at low temperatures have been also studied. High-sensitive piezoresistive sensor to measure pressure of liquid helium on the basis of silicon whiskers with a giant gauge factor was developed. Heavily doped Si whiskers with classic piezoresistance have been successfully used in mechanical sensors operating in the wide temperature range 4.2 - 300 K.
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| first_indexed | 2025-12-07T13:25:15Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-135328 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-07T13:25:15Z |
| publishDate | 2012 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Druzhinin, A.A. Maryamova, I.I. Kutrakov, O.P. Liakh-Kaguy, N.S. Palewski, T. 2018-06-14T19:01:19Z 2018-06-14T19:01:19Z 2012 Strain induced effects in p-type silicon whiskers at low temperatures / A.A. Druzhinin, I.I. Maryamova, O.P. Kutrakov, N.S. Liakh-Kaguy, T. Palewski // Functional Materials. — 2012. — Т. 19, № 3. — С. 325-329. — Бібліогр.: 11 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/135328 Complex studies of strain induced effects in boron doped p-type silicon whiskers with [111] crystallographic direction in the wide temperature range 4.2 - 300 K at magnetic fields up to 14 T and under high-energy electron irradiation were carried out. The peculiarities of piezomagnetoresistance of Si whiskers heavily boron doped and with boron concentration in the vicinity of metal-insulator transition were determined. The influence of electron irradiation with energy 10 MeV and fluence Φ = 5*10¹⁷ el/cm ² on the gauge factor of boron doped Si whiskers at low temperatures have been also studied. High-sensitive piezoresistive sensor to measure pressure of liquid helium on the basis of silicon whiskers with a giant gauge factor was developed. Heavily doped Si whiskers with classic piezoresistance have been successfully used in mechanical sensors operating in the wide temperature range 4.2 - 300 K. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Strain induced effects in p-type silicon whiskers at low temperatures Деформаційно стимульовані ефекти у ниткоподібних кристалах кремнію p-типу за низьких температур Article published earlier |
| spellingShingle | Strain induced effects in p-type silicon whiskers at low temperatures Druzhinin, A.A. Maryamova, I.I. Kutrakov, O.P. Liakh-Kaguy, N.S. Palewski, T. Characterization and properties |
| title | Strain induced effects in p-type silicon whiskers at low temperatures |
| title_alt | Деформаційно стимульовані ефекти у ниткоподібних кристалах кремнію p-типу за низьких температур |
| title_full | Strain induced effects in p-type silicon whiskers at low temperatures |
| title_fullStr | Strain induced effects in p-type silicon whiskers at low temperatures |
| title_full_unstemmed | Strain induced effects in p-type silicon whiskers at low temperatures |
| title_short | Strain induced effects in p-type silicon whiskers at low temperatures |
| title_sort | strain induced effects in p-type silicon whiskers at low temperatures |
| topic | Characterization and properties |
| topic_facet | Characterization and properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/135328 |
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