Ion plasma deposition and optical properties of SiC films

• Опубліковано в: : Functional Materials
• Дата: 2005
• Автори: Semenov, A.V., Lopin, A.V., Puzikov, V.M., Muto, Sh.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2005
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/135335
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Ion plasma deposition and optical properties of SiC films / Sh. Muto, V.M. Puzikov, A.V. Lopin, A.V. Semenov // Functional Materials. — 2005. — Т. 12, № 2. — С. 216-223. — Бібліогр.: 22 назв. — англ.

SiC films have been obtained by direct deposition from a C and Si ions flow at energy values in the 30 to 1.500 eV range. The films deposited at the substrate temperature 600 С were chemically and structurally disordered. The deposition energy increase resulted in a reduced optical slot of the film...