Layer interaction in thin film CIS based photovoltaic device

• Veröffentlicht in: Functional Materials
• Datum: 2005
• Hauptverfasser: Klochko, N.P., Volkova, N.D., Dobrotvorskaya, M.V., Mateychenko, P.V., Kopach, V.R., Shkaleto, V.I., Karasyov, S.N.
• Format: Artikel
• Sprache: English
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2005
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/135338
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Layer interaction in thin film CIS based photovoltaic device / N.P. Klochko, N.D. Volkova, M.V. Dobrotvorskaya, P.V. Mateychenko, V.R. Kopach, V.I. Shkaleto, S.N. Karasyov // Functional Materials. — 2005. — Т. 12, № 2. — С. 228-233. — Бібліогр.: 12 назв. — англ.

The function of thin film photovoltaic device on the base of copper indium diselenide (CIS) depends immediately on the character of interactions in the layers being in contact therein: base CIS layer, buffer ZnSe layer, transparent conductive film of indium-tin oxide (ITO). Such interaction may occu...