Layer interaction in thin film CIS based photovoltaic device
The function of thin film photovoltaic device on the base of copper indium diselenide (CIS) depends immediately on the character of interactions in the layers being in contact therein: base CIS layer, buffer ZnSe layer, transparent conductive film of indium-tin oxide (ITO). Such interaction may occu...
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| Veröffentlicht in: | Functional Materials |
|---|---|
| Datum: | 2005 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2005
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/135338 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Layer interaction in thin film CIS based photovoltaic device / N.P. Klochko, N.D. Volkova, M.V. Dobrotvorskaya, P.V. Mateychenko, V.R. Kopach, V.I. Shkaleto, S.N. Karasyov // Functional Materials. — 2005. — Т. 12, № 2. — С. 228-233. — Бібліогр.: 12 назв. — англ. |