Photocurrent generation in single electron tunneling transistors
A single-electron tunneling transistor (SET) with a non-equilibrium mode population in one of the leads is analyzed theoretically. We model transport through a dot coupled to a channel, both formed by gates from the two-dimensional electron gas of a GaAs/AlGaAs heterostructure. The non-equilibrium m...
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| Published in: | Физика низких температур |
|---|---|
| Date: | 1999 |
| Main Author: | |
| Language: | English |
| Published: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
1999
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/136222 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Photocurrent generation in single electron tunneling transistors / O. Tageman // Физика низких температур. — 1999. — Т. 25, № 3. — С. 290-297. — Бібліогр.: 26 назв. — англ. |