Photocurrent generation in single electron tunneling transistors
A single-electron tunneling transistor (SET) with a non-equilibrium mode population in one of the leads is analyzed theoretically. We model transport through a dot coupled to a channel, both formed by gates from the two-dimensional electron gas of a GaAs/AlGaAs heterostructure. The non-equilibrium m...
Gespeichert in:
| Veröffentlicht in: | Физика низких температур |
|---|---|
| Datum: | 1999 |
| 1. Verfasser: | |
| Sprache: | English |
| Veröffentlicht: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
1999
|
| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/136222 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photocurrent generation in single electron tunneling transistors / O. Tageman // Физика низких температур. — 1999. — Т. 25, № 3. — С. 290-297. — Бібліогр.: 26 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | A single-electron tunneling transistor (SET) with a non-equilibrium mode population in one of the leads is analyzed theoretically. We model transport through a dot coupled to a channel, both formed by gates from the two-dimensional electron gas of a GaAs/AlGaAs heterostructure. The non-equilibrium mode population, which is induced by coherent THz-pumping in the channel, produces empty states below the Fermi level for electrons to tunnel into. A photocurrent arises, which is periodically saw-tooth peaked with respect to the voltage on a central gate. For intense THz-fields the peaks display plateaus that reflect the energy dependence of the mode population. We also predict a high-gain Vin/Vout transfer-characteristic, similar to that of a current biased SET.
|
|---|---|
| ISSN: | 0132-6414 |