Photocurrent generation in single electron tunneling transistors
A single-electron tunneling transistor (SET) with a non-equilibrium mode population in one of the leads is analyzed theoretically. We model transport through a dot coupled to a channel, both formed by gates from the two-dimensional electron gas of a GaAs/AlGaAs heterostructure. The non-equilibrium m...
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| Published in: | Физика низких температур |
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| Date: | 1999 |
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| Language: | English |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
1999
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/136222 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Photocurrent generation in single electron tunneling transistors / O. Tageman // Физика низких температур. — 1999. — Т. 25, № 3. — С. 290-297. — Бібліогр.: 26 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862589189747376128 |
|---|---|
| author | Tageman, O. |
| author_facet | Tageman, O. |
| citation_txt | Photocurrent generation in single electron tunneling transistors / O. Tageman // Физика низких температур. — 1999. — Т. 25, № 3. — С. 290-297. — Бібліогр.: 26 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | A single-electron tunneling transistor (SET) with a non-equilibrium mode population in one of the leads is analyzed theoretically. We model transport through a dot coupled to a channel, both formed by gates from the two-dimensional electron gas of a GaAs/AlGaAs heterostructure. The non-equilibrium mode population, which is induced by coherent THz-pumping in the channel, produces empty states below the Fermi level for electrons to tunnel into. A photocurrent arises, which is periodically saw-tooth peaked with respect to the voltage on a central gate. For intense THz-fields the peaks display plateaus that reflect the energy dependence of the mode population. We also predict a high-gain Vin/Vout transfer-characteristic, similar to that of a current biased SET.
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| first_indexed | 2025-11-27T02:24:41Z |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-136222 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-11-27T02:24:41Z |
| publishDate | 1999 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Tageman, O. 2018-06-16T08:02:32Z 2018-06-16T08:02:32Z 1999 Photocurrent generation in single electron tunneling transistors / O. Tageman // Физика низких температур. — 1999. — Т. 25, № 3. — С. 290-297. — Бібліогр.: 26 назв. — англ. 0132-6414 https://nasplib.isofts.kiev.ua/handle/123456789/136222 A single-electron tunneling transistor (SET) with a non-equilibrium mode population in one of the leads is analyzed theoretically. We model transport through a dot coupled to a channel, both formed by gates from the two-dimensional electron gas of a GaAs/AlGaAs heterostructure. The non-equilibrium mode population, which is induced by coherent THz-pumping in the channel, produces empty states below the Fermi level for electrons to tunnel into. A photocurrent arises, which is periodically saw-tooth peaked with respect to the voltage on a central gate. For intense THz-fields the peaks display plateaus that reflect the energy dependence of the mode population. We also predict a high-gain Vin/Vout transfer-characteristic, similar to that of a current biased SET. We acknowledge financial support from the EU (MEL ARI Research project 22953 — CEIARGE), from the Swedish Research Council for Engineering Sciences (TFR) and from Ericsson Microwave Systems AB. We are greatful to L. Y. Gorelik who proposed the problem and who has contributed in discussion. Also Peter Wahlgren and Mats Jonson are acknowledged for helpful discussions. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Низкоразмерные и неупорядоченные системы Photocurrent generation in single electron tunneling transistors published earlier |
| spellingShingle | Photocurrent generation in single electron tunneling transistors Tageman, O. Низкоразмерные и неупорядоченные системы |
| title | Photocurrent generation in single electron tunneling transistors |
| title_full | Photocurrent generation in single electron tunneling transistors |
| title_fullStr | Photocurrent generation in single electron tunneling transistors |
| title_full_unstemmed | Photocurrent generation in single electron tunneling transistors |
| title_short | Photocurrent generation in single electron tunneling transistors |
| title_sort | photocurrent generation in single electron tunneling transistors |
| topic | Низкоразмерные и неупорядоченные системы |
| topic_facet | Низкоразмерные и неупорядоченные системы |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/136222 |
| work_keys_str_mv | AT tagemano photocurrentgenerationinsingleelectrontunnelingtransistors |