Infrared spectroscopy and electroreflectance in the region of fundamental optical transition E₀ of heavily doped n-GaAs (100)

• Veröffentlicht in: Functional Materials
• Datum: 2009
• Hauptverfasser: Gentsar, P.O., Vlasenko, O.I., Vuichyk, M.V., Stronski, O.V.
• Format: Artikel
• Sprache: English
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2009
• Schlagworte: Characterization and properties
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/136623
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Infrared spectroscopy and electroreflectance in the region of fundamental optical transition E₀ of heavily doped n-GaAs (100) // P.O. Gentsar, O.I. Vlasenko, M.V. Vuichyk, O.V. Stronski // Functional Materials. — 2009. — Т. 16, № 1. — С. 23-28. — Бібліогр.: 9 назв. — англ.

Studied were the reflection spectra of dynamically chemically etched n-GaAs (100) single crystals with electron concentration of 10¹⁸ to 5·10¹⁸ cm⁻³ in the 1.4-25 μm range as well as the electroreflection ones in 1.3-1.6 eV range using electrolytic method. The values of physical parameters and param...