Initial stages of diffusion and phase formation in Sc/Si layered systems

Kinetics of phase formation Sc/Si multilayers and Si/Sc/Si three-layers within the temperature range of 130-400°C has been studied by cross-sectional transmission electron microscopy and small-angle X-ray reflectometry. Growth of ScSi silicide governed by diffusion kinetics was observed at all tempe...

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Published in:Functional Materials
Date:2008
Main Authors: Voronov, D.L., Zubarev, E.N., Kondratenko, V.V., Pershun, Yu.P., Sevryukova, V.A., Bugayev, Ye.A.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2008
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/137250
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Initial stages of diffusion and phase formation in Sc/Si layered systems / D.L. Voronov, E.N. Zubarev, V.V. Kondratenko, Yu.P. Pershun, V.A. Sevryukova, Ye.A. Bugayev // Functional Materials. — 2008. — Т. 15, № 1. — С. 30-37. — Бібліогр.: 23 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine