Initial stages of diffusion and phase formation in Sc/Si layered systems
Kinetics of phase formation Sc/Si multilayers and Si/Sc/Si three-layers within the temperature range of 130-400°C has been studied by cross-sectional transmission electron microscopy and small-angle X-ray reflectometry. Growth of ScSi silicide governed by diffusion kinetics was observed at all tempe...
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| Опубліковано в: : | Functional Materials |
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| Дата: | 2008 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2008
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/137250 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Initial stages of diffusion and phase formation in Sc/Si layered systems / D.L. Voronov, E.N. Zubarev, V.V. Kondratenko, Yu.P. Pershun, V.A. Sevryukova, Ye.A. Bugayev // Functional Materials. — 2008. — Т. 15, № 1. — С. 30-37. — Бібліогр.: 23 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862738403505733632 |
|---|---|
| author | Voronov, D.L. Zubarev, E.N. Kondratenko, V.V. Pershun, Yu.P. Sevryukova, V.A. Bugayev, Ye.A. |
| author_facet | Voronov, D.L. Zubarev, E.N. Kondratenko, V.V. Pershun, Yu.P. Sevryukova, V.A. Bugayev, Ye.A. |
| citation_txt | Initial stages of diffusion and phase formation in Sc/Si layered systems / D.L. Voronov, E.N. Zubarev, V.V. Kondratenko, Yu.P. Pershun, V.A. Sevryukova, Ye.A. Bugayev // Functional Materials. — 2008. — Т. 15, № 1. — С. 30-37. — Бібліогр.: 23 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | Kinetics of phase formation Sc/Si multilayers and Si/Sc/Si three-layers within the temperature range of 130-400°C has been studied by cross-sectional transmission electron microscopy and small-angle X-ray reflectometry. Growth of ScSi silicide governed by diffusion kinetics was observed at all temperatures. Two growth stages of nonparabolic and parabolic behavior were revealed. Initial nonparabolic stage is characterized by higher diffusion coefficient, which decreases during annealing in 20 times due to silicide structural relaxation. After annihilation of excess free volume a transition to parabolic growth takes place. Parameters of interdiffusion (activation energy E ≈1 eV and pre-exponential factor D₀ = 4.10⁻¹² m²s⁻¹) were determined for parabolic growth stage.
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| first_indexed | 2025-12-07T20:03:52Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-137250 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-07T20:03:52Z |
| publishDate | 2008 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Voronov, D.L. Zubarev, E.N. Kondratenko, V.V. Pershun, Yu.P. Sevryukova, V.A. Bugayev, Ye.A. 2018-06-17T09:21:01Z 2018-06-17T09:21:01Z 2008 Initial stages of diffusion and phase formation in Sc/Si layered systems / D.L. Voronov, E.N. Zubarev, V.V. Kondratenko, Yu.P. Pershun, V.A. Sevryukova, Ye.A. Bugayev // Functional Materials. — 2008. — Т. 15, № 1. — С. 30-37. — Бібліогр.: 23 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/137250 Kinetics of phase formation Sc/Si multilayers and Si/Sc/Si three-layers within the temperature range of 130-400°C has been studied by cross-sectional transmission electron microscopy and small-angle X-ray reflectometry. Growth of ScSi silicide governed by diffusion kinetics was observed at all temperatures. Two growth stages of nonparabolic and parabolic behavior were revealed. Initial nonparabolic stage is characterized by higher diffusion coefficient, which decreases during annealing in 20 times due to silicide structural relaxation. After annihilation of excess free volume a transition to parabolic growth takes place. Parameters of interdiffusion (activation energy E ≈1 eV and pre-exponential factor D₀ = 4.10⁻¹² m²s⁻¹) were determined for parabolic growth stage. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Initial stages of diffusion and phase formation in Sc/Si layered systems Початкові стадії дифузії і фазоутворення в шаруватих системах Sc/Si Article published earlier |
| spellingShingle | Initial stages of diffusion and phase formation in Sc/Si layered systems Voronov, D.L. Zubarev, E.N. Kondratenko, V.V. Pershun, Yu.P. Sevryukova, V.A. Bugayev, Ye.A. Characterization and properties |
| title | Initial stages of diffusion and phase formation in Sc/Si layered systems |
| title_alt | Початкові стадії дифузії і фазоутворення в шаруватих системах Sc/Si |
| title_full | Initial stages of diffusion and phase formation in Sc/Si layered systems |
| title_fullStr | Initial stages of diffusion and phase formation in Sc/Si layered systems |
| title_full_unstemmed | Initial stages of diffusion and phase formation in Sc/Si layered systems |
| title_short | Initial stages of diffusion and phase formation in Sc/Si layered systems |
| title_sort | initial stages of diffusion and phase formation in sc/si layered systems |
| topic | Characterization and properties |
| topic_facet | Characterization and properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/137250 |
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