Initial stages of diffusion and phase formation in Sc/Si layered systems
Kinetics of phase formation Sc/Si multilayers and Si/Sc/Si three-layers within the temperature range of 130-400°C has been studied by cross-sectional transmission electron microscopy and small-angle X-ray reflectometry. Growth of ScSi silicide governed by diffusion kinetics was observed at all tempe...
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| Veröffentlicht in: | Functional Materials |
|---|---|
| Datum: | 2008 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2008
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/137250 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Initial stages of diffusion and phase formation in Sc/Si layered systems / D.L. Voronov, E.N. Zubarev, V.V. Kondratenko, Yu.P. Pershun, V.A. Sevryukova, Ye.A. Bugayev // Functional Materials. — 2008. — Т. 15, № 1. — С. 30-37. — Бібліогр.: 23 назв. — англ. |