The local charge carrier interaction with lattice defects in ZnCdTe and ZnHgTe solid solutions

• Опубліковано в: : Functional Materials
• Дата: 2009
• Автор: Malyk, O.P.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2009
• Теми: Characterization and properties
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/137730
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: The local charge carrier interaction with lattice defects in ZnCdTe and ZnHgTe solid solutions // O.P. Malyk // Functional Materials. — 2009. — Т. 16, № 2. — С. 179-182. — Бібліогр.: 16 назв. — англ.

The processes of the charge carrier scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, neutral and ionized impurities in ZnₓCd₁₋ₓTe (0x1) and ZnₓHg₁₋ₓTe (x = 0.15) are considered. The temperature...