Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures

Defects in Si/SiGe heterostructures and electrical behavior thereof have been studied. Misfit dislocations were observed in the epitaxial layers using cross-sectional transmission electron microscopy. These defects cause anomalies in the electrical behavior. It has been shown that, in spite of anoma...

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Date:2004
Main Authors: Horvath, Zs.J., Orlov, L.K., Ivina, N.L., Demidov, E.S., Vdovin, V.I., Adam, M., Szabo, I., Dozsa, L., Pashaev, E.M., Ivanov, Yu.M., Yakunin, S.N.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2004
Series:Functional Materials
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/138819
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures / Zs.J. Horvath, L.K. Orlov, N.L. Ivina, E.S. Demidov, V.I. Vdovin , M. Adam, I. Szabo, L. Dozsa, E.M. Pashaev, Yu.M. Ivanov, S.N. Yakunin // Functional Materials. — 2004. — Т. 11, № 2. — С. 381-385. — Бібліогр.: 14 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling nasplib_isofts_kiev_ua-123456789-1388192025-02-09T20:59:01Z Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures плив дислокацій y релаксованих шарах SiGe на електричш характеристики гетероструктур Si/SiGe Horvath, Zs.J. Orlov, L.K. Ivina, N.L. Demidov, E.S. Vdovin, V.I. Adam, M. Szabo, I. Dozsa, L. Pashaev, E.M. Ivanov, Yu.M. Yakunin, S.N. Defects in Si/SiGe heterostructures and electrical behavior thereof have been studied. Misfit dislocations were observed in the epitaxial layers using cross-sectional transmission electron microscopy. These defects cause anomalies in the electrical behavior. It has been shown that, in spite of anomalies, the electrical measurements provide useful and reliable information on the structures. Исследованы дефекты в гетероструктурах Si/SiGe и их электрические характеристики. В эпитаксиальных слоях методом просвечивающей электронной микроскопии поперечных сечений обнаружены дислокации несоответствия. Эти дефекты вызывают аномалии в электрических характеристиках. Показано, что, несмотря на эти аномалии, электрические измерения обеспечивают полезную и надежную информацию о структурах. Досліджєно дефекти у гетероструктурах Si/SiGe та їх єлєктричні характеристики. В епітаксиальних шарах методом просвічувальної електронної мікроскопії поперечних перерізів виявлено дислокації невідповідності. Ці дефекти спричиняють аномалії в електричних характеристиках. Показано, що, незважаючи на ці аномалії, електричні вимірювання забезпечують корисну та надійну інформацію про структури. 2004 Article Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures / Zs.J. Horvath, L.K. Orlov, N.L. Ivina, E.S. Demidov, V.I. Vdovin , M. Adam, I. Szabo, L. Dozsa, E.M. Pashaev, Yu.M. Ivanov, S.N. Yakunin // Functional Materials. — 2004. — Т. 11, № 2. — С. 381-385. — Бібліогр.: 14 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/138819 en Functional Materials application/pdf НТК «Інститут монокристалів» НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Defects in Si/SiGe heterostructures and electrical behavior thereof have been studied. Misfit dislocations were observed in the epitaxial layers using cross-sectional transmission electron microscopy. These defects cause anomalies in the electrical behavior. It has been shown that, in spite of anomalies, the electrical measurements provide useful and reliable information on the structures.
format Article
author Horvath, Zs.J.
Orlov, L.K.
Ivina, N.L.
Demidov, E.S.
Vdovin, V.I.
Adam, M.
Szabo, I.
Dozsa, L.
Pashaev, E.M.
Ivanov, Yu.M.
Yakunin, S.N.
spellingShingle Horvath, Zs.J.
Orlov, L.K.
Ivina, N.L.
Demidov, E.S.
Vdovin, V.I.
Adam, M.
Szabo, I.
Dozsa, L.
Pashaev, E.M.
Ivanov, Yu.M.
Yakunin, S.N.
Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures
Functional Materials
author_facet Horvath, Zs.J.
Orlov, L.K.
Ivina, N.L.
Demidov, E.S.
Vdovin, V.I.
Adam, M.
Szabo, I.
Dozsa, L.
Pashaev, E.M.
Ivanov, Yu.M.
Yakunin, S.N.
author_sort Horvath, Zs.J.
title Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures
title_short Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures
title_full Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures
title_fullStr Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures
title_full_unstemmed Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures
title_sort effect of dislocations in relaxed mbe sige layers on the electrical behavior of si/sige heterostructures
publisher НТК «Інститут монокристалів» НАН України
publishDate 2004
url https://nasplib.isofts.kiev.ua/handle/123456789/138819
citation_txt Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures / Zs.J. Horvath, L.K. Orlov, N.L. Ivina, E.S. Demidov, V.I. Vdovin , M. Adam, I. Szabo, L. Dozsa, E.M. Pashaev, Yu.M. Ivanov, S.N. Yakunin // Functional Materials. — 2004. — Т. 11, № 2. — С. 381-385. — Бібліогр.: 14 назв. — англ.
series Functional Materials
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first_indexed 2025-11-30T17:01:00Z
last_indexed 2025-11-30T17:01:00Z
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