Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures
Defects in Si/SiGe heterostructures and electrical behavior thereof have been studied. Misfit dislocations were observed in the epitaxial layers using cross-sectional transmission electron microscopy. These defects cause anomalies in the electrical behavior. It has been shown that, in spite of anoma...
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| Date: | 2004 |
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| Language: | English |
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НТК «Інститут монокристалів» НАН України
2004
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| Series: | Functional Materials |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/138819 |
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| Cite this: | Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures / Zs.J. Horvath, L.K. Orlov, N.L. Ivina, E.S. Demidov, V.I. Vdovin , M. Adam, I. Szabo, L. Dozsa, E.M. Pashaev, Yu.M. Ivanov, S.N. Yakunin // Functional Materials. — 2004. — Т. 11, № 2. — С. 381-385. — Бібліогр.: 14 назв. — англ. |
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nasplib_isofts_kiev_ua-123456789-1388192025-02-09T20:59:01Z Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures плив дислокацій y релаксованих шарах SiGe на електричш характеристики гетероструктур Si/SiGe Horvath, Zs.J. Orlov, L.K. Ivina, N.L. Demidov, E.S. Vdovin, V.I. Adam, M. Szabo, I. Dozsa, L. Pashaev, E.M. Ivanov, Yu.M. Yakunin, S.N. Defects in Si/SiGe heterostructures and electrical behavior thereof have been studied. Misfit dislocations were observed in the epitaxial layers using cross-sectional transmission electron microscopy. These defects cause anomalies in the electrical behavior. It has been shown that, in spite of anomalies, the electrical measurements provide useful and reliable information on the structures. Исследованы дефекты в гетероструктурах Si/SiGe и их электрические характеристики. В эпитаксиальных слоях методом просвечивающей электронной микроскопии поперечных сечений обнаружены дислокации несоответствия. Эти дефекты вызывают аномалии в электрических характеристиках. Показано, что, несмотря на эти аномалии, электрические измерения обеспечивают полезную и надежную информацию о структурах. Досліджєно дефекти у гетероструктурах Si/SiGe та їх єлєктричні характеристики. В епітаксиальних шарах методом просвічувальної електронної мікроскопії поперечних перерізів виявлено дислокації невідповідності. Ці дефекти спричиняють аномалії в електричних характеристиках. Показано, що, незважаючи на ці аномалії, електричні вимірювання забезпечують корисну та надійну інформацію про структури. 2004 Article Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures / Zs.J. Horvath, L.K. Orlov, N.L. Ivina, E.S. Demidov, V.I. Vdovin , M. Adam, I. Szabo, L. Dozsa, E.M. Pashaev, Yu.M. Ivanov, S.N. Yakunin // Functional Materials. — 2004. — Т. 11, № 2. — С. 381-385. — Бібліогр.: 14 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/138819 en Functional Materials application/pdf НТК «Інститут монокристалів» НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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| language |
English |
| description |
Defects in Si/SiGe heterostructures and electrical behavior thereof have been studied. Misfit dislocations were observed in the epitaxial layers using cross-sectional transmission electron microscopy. These defects cause anomalies in the electrical behavior. It has been shown that, in spite of anomalies, the electrical measurements provide useful and reliable information on the structures. |
| format |
Article |
| author |
Horvath, Zs.J. Orlov, L.K. Ivina, N.L. Demidov, E.S. Vdovin, V.I. Adam, M. Szabo, I. Dozsa, L. Pashaev, E.M. Ivanov, Yu.M. Yakunin, S.N. |
| spellingShingle |
Horvath, Zs.J. Orlov, L.K. Ivina, N.L. Demidov, E.S. Vdovin, V.I. Adam, M. Szabo, I. Dozsa, L. Pashaev, E.M. Ivanov, Yu.M. Yakunin, S.N. Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures Functional Materials |
| author_facet |
Horvath, Zs.J. Orlov, L.K. Ivina, N.L. Demidov, E.S. Vdovin, V.I. Adam, M. Szabo, I. Dozsa, L. Pashaev, E.M. Ivanov, Yu.M. Yakunin, S.N. |
| author_sort |
Horvath, Zs.J. |
| title |
Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures |
| title_short |
Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures |
| title_full |
Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures |
| title_fullStr |
Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures |
| title_full_unstemmed |
Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures |
| title_sort |
effect of dislocations in relaxed mbe sige layers on the electrical behavior of si/sige heterostructures |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2004 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/138819 |
| citation_txt |
Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures / Zs.J. Horvath, L.K. Orlov, N.L. Ivina, E.S. Demidov, V.I. Vdovin , M. Adam, I. Szabo, L. Dozsa, E.M. Pashaev, Yu.M. Ivanov, S.N. Yakunin // Functional Materials. — 2004. — Т. 11, № 2. — С. 381-385. — Бібліогр.: 14 назв. — англ. |
| series |
Functional Materials |
| work_keys_str_mv |
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| first_indexed |
2025-11-30T17:01:00Z |
| last_indexed |
2025-11-30T17:01:00Z |
| _version_ |
1850235487458951168 |
| fulltext |
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