Relation between structure inhomogeneities and relaxation processes in excited silicon crystals
The part played by electric current pulses in formation of residual electroplastic effect and the "electric memory" effect in dislocation-containing silicon crystals has been investigated. The character of the observed effects has been found to be defined by parameters of electronic excita...
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| Veröffentlicht in: | Functional Materials |
|---|---|
| Datum: | 2004 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/138821 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Relation between structure inhomogeneities and relaxation processes in excited silicon crystals / V.A. Makara, A.M. Kolomiets , Yu.L. Kolchenko, S.M. Naumenko, O.V. Rudenko, L.P. Steblenko // Functional Materials. — 2004. — Т. 11, № 2. — С. 386-388. — Бібліогр.: 10 назв. — англ. |