Relation between structure inhomogeneities and relaxation processes in excited silicon crystals
The part played by electric current pulses in formation of residual electroplastic effect and the "electric memory" effect in dislocation-containing silicon crystals has been investigated. The character of the observed effects has been found to be defined by parameters of electronic excita...
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| Veröffentlicht in: | Functional Materials |
|---|---|
| Datum: | 2004 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/138821 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Relation between structure inhomogeneities and relaxation processes in excited silicon crystals / V.A. Makara, A.M. Kolomiets , Yu.L. Kolchenko, S.M. Naumenko, O.V. Rudenko, L.P. Steblenko // Functional Materials. — 2004. — Т. 11, № 2. — С. 386-388. — Бібліогр.: 10 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1859636008655519744 |
|---|---|
| author | Makara, V.A. Kolomiets, A.M. Kolchenko, Yu.L. Naumenko, S.M. Rudenko, O.V. Steblenko, L.P. |
| author_facet | Makara, V.A. Kolomiets, A.M. Kolchenko, Yu.L. Naumenko, S.M. Rudenko, O.V. Steblenko, L.P. |
| citation_txt | Relation between structure inhomogeneities and relaxation processes in excited silicon crystals / V.A. Makara, A.M. Kolomiets , Yu.L. Kolchenko, S.M. Naumenko, O.V. Rudenko, L.P. Steblenko // Functional Materials. — 2004. — Т. 11, № 2. — С. 386-388. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | The part played by electric current pulses in formation of residual electroplastic effect and the "electric memory" effect in dislocation-containing silicon crystals has been investigated. The character of the observed effects has been found to be defined by parameters of electronic excitation and to result from relationship between the charge state and its relaxation in motionless and mobile dislocations.
Исследована роль импульсного электрического тока в формировании остаточного электропластического эффекта и эффекта "электрической памяти" дислокационных кристаллов кремния. Установлено, что характер найденных эффектов регулируется параметрами электронного возбуждения и обусловливается связью между зарядовым состоянием и его релаксацией в неподвижных и подвижных дислокациях.
Досліджєно роль імпульсного електричного струму у формуванні залишкового елек-тропластичного ефекту та ефекту "електричної пам’яті" дислокаційних кристалів кремнію. Встановлено, що характер виявлениех ефектів регулюється параметрами електронного збудження і обумовлюється зв’язком між зарядовим станом і та його релаксацією у нерухомих і рухомих дислокацій.
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| first_indexed | 2025-12-07T13:16:28Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-138821 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-07T13:16:28Z |
| publishDate | 2004 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Makara, V.A. Kolomiets, A.M. Kolchenko, Yu.L. Naumenko, S.M. Rudenko, O.V. Steblenko, L.P. 2018-06-19T15:40:40Z 2018-06-19T15:40:40Z 2004 Relation between structure inhomogeneities and relaxation processes in excited silicon crystals / V.A. Makara, A.M. Kolomiets , Yu.L. Kolchenko, S.M. Naumenko, O.V. Rudenko, L.P. Steblenko // Functional Materials. — 2004. — Т. 11, № 2. — С. 386-388. — Бібліогр.: 10 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/138821 The part played by electric current pulses in formation of residual electroplastic effect and the "electric memory" effect in dislocation-containing silicon crystals has been investigated. The character of the observed effects has been found to be defined by parameters of electronic excitation and to result from relationship between the charge state and its relaxation in motionless and mobile dislocations. Исследована роль импульсного электрического тока в формировании остаточного электропластического эффекта и эффекта "электрической памяти" дислокационных кристаллов кремния. Установлено, что характер найденных эффектов регулируется параметрами электронного возбуждения и обусловливается связью между зарядовым состоянием и его релаксацией в неподвижных и подвижных дислокациях. Досліджєно роль імпульсного електричного струму у формуванні залишкового елек-тропластичного ефекту та ефекту "електричної пам’яті" дислокаційних кристалів кремнію. Встановлено, що характер виявлениех ефектів регулюється параметрами електронного збудження і обумовлюється зв’язком між зарядовим станом і та його релаксацією у нерухомих і рухомих дислокацій. en НТК «Інститут монокристалів» НАН України Functional Materials Relation between structure inhomogeneities and relaxation processes in excited silicon crystals Зв’язок між структурними неоднородностями i релаксаційними процесами в збуджених кристалах кремнію Article published earlier |
| spellingShingle | Relation between structure inhomogeneities and relaxation processes in excited silicon crystals Makara, V.A. Kolomiets, A.M. Kolchenko, Yu.L. Naumenko, S.M. Rudenko, O.V. Steblenko, L.P. |
| title | Relation between structure inhomogeneities and relaxation processes in excited silicon crystals |
| title_alt | Зв’язок між структурними неоднородностями i релаксаційними процесами в збуджених кристалах кремнію |
| title_full | Relation between structure inhomogeneities and relaxation processes in excited silicon crystals |
| title_fullStr | Relation between structure inhomogeneities and relaxation processes in excited silicon crystals |
| title_full_unstemmed | Relation between structure inhomogeneities and relaxation processes in excited silicon crystals |
| title_short | Relation between structure inhomogeneities and relaxation processes in excited silicon crystals |
| title_sort | relation between structure inhomogeneities and relaxation processes in excited silicon crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/138821 |
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