Relation between structure inhomogeneities and relaxation processes in excited silicon crystals

• Veröffentlicht in: Functional Materials
• Datum: 2004
• Hauptverfasser: Makara, V.A., Kolomiets, A.M., Kolchenko, Yu.L., Naumenko, S.M., Rudenko, O.V., Steblenko, L.P.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2004
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/138821
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Relation between structure inhomogeneities and relaxation processes in excited silicon crystals / V.A. Makara, A.M. Kolomiets , Yu.L. Kolchenko, S.M. Naumenko, O.V. Rudenko, L.P. Steblenko // Functional Materials. — 2004. — Т. 11, № 2. — С. 386-388. — Бібліогр.: 10 назв. — англ.

The part played by electric current pulses in formation of residual electroplastic effect and the "electric memory" effect in dislocation-containing silicon crystals has been investigated. The character of the observed effects has been found to be defined by parameters of electronic excita...