Radiation-induced changes in dielectric and photoelectric properties of AᴵᴵBⱽᴵ crystals

• Опубліковано в: : Functional Materials
• Дата: 2004
• Автори: Ryzhikov, V., Starzhinskiy, N., Chugai, O., Seminozhenko, V., Migal, V., Komar, V., Klimenko, I., Katrunov, K., Abashin, S., Oleinik, S., Sulima, S., Zenya, I.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2004
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/139476
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Radiation-induced changes in dielectric and photoelectric properties of AᴵᴵBⱽᴵcrystals / V. Ryzhikov, N. Starzhinskiy, O. Chugai , V. Seminozhenko, V. Migal’ , V. Komar’, I. Klimenko , K. Katrunov, S. Abashin, S. Oleinik, S. Sulima, I. Zenya // Functional Materials. — 2004. — Т. 11, № 3. — С. 563-566. — Бібліогр.: 5 назв. — англ.

To determine the kinetics of pre-threshold defect formation, studies have been carried out of dielectric permittivity of isovalently doped zinc selenide and Cd₁₋ₓZnₓTe crystals (x = 0.16). X-ray irradiation of the samples was carried out (W-anode, 100-150 kV), with its dose D varied within the limit...