Radiation-induced changes in dielectric and photoelectric properties of AᴵᴵBⱽᴵ crystals
To determine the kinetics of pre-threshold defect formation, studies have been carried out of dielectric permittivity of isovalently doped zinc selenide and Cd₁₋ₓZnₓTe crystals (x = 0.16). X-ray irradiation of the samples was carried out (W-anode, 100-150 kV), with its dose D varied within the limit...
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| Veröffentlicht in: | Functional Materials |
|---|---|
| Datum: | 2004 |
| Hauptverfasser: | , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/139476 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Radiation-induced changes in dielectric and photoelectric properties of AᴵᴵBⱽᴵcrystals / V. Ryzhikov, N. Starzhinskiy, O. Chugai , V. Seminozhenko, V. Migal’ , V. Komar’, I. Klimenko , K. Katrunov, S. Abashin, S. Oleinik, S. Sulima, I. Zenya // Functional Materials. — 2004. — Т. 11, № 3. — С. 563-566. — Бібліогр.: 5 назв. — англ. |