Preparation of high-purity charge for growth of Cd₁₋ₓ ZnₓTe crystals

• Опубліковано в: : Functional Materials
• Дата: 2004
• Автори: Voronkin, E.F., Atroshchenko, L.V., Galkin, S.N., Lalayants, A.I., Rybalka, I.A., Ryzhikov, V.D.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2004
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/139486
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Preparation of high-purity charge for growth of Cd₁₋ₓ ZnₓTe crystals / E.F. Voronkin, L.V. Atroshchenko, S.N. Galkin, A.I. Lalayants, I.A. Rybalka, V.D. Ryzhikov // Functional Materials. — 2004. — Т. 11, № 3. — С. 612-616. — Бібліогр.: 11 назв. — англ.

Possibilities have been studied to prepare high-purity charge for growth of Cd₁₋ₓ ZnₓTe crystals of high perfection and spectrometric quality. Studies have been carried out of deep purification of Cd, Zn and Te using the installation developed by us, which comprised a rotating container of optical q...